IPP030N10N3GXKSA1

Vgs(th) (Max) @ Id:	3.5V @ 275µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	14800pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	206nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	3 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPN030N10N3GXKSA1 is a MOSFET device, which is classified under Transistors-FETs, MOSFETs-Single. It is an N-Channel enhancement type MOSFET with source-drain chip connection. It is designed to provide high current drive and low to medium current level on-off switching capabilities over a wide operating temperature range from -55 to 125 degrees Celsius. In terms of application fields, IPN030N10N3GXKSA1 can be used for various industrial electronic operations. One major application includes controlling high-current switching applications such as fan control and motor control. It can also be used in the building of electronic circuit boards for displays, radio systems, electronic toys, etc. IPN030N10N3GXKSA1 has a wide operating range and is a perfect choice for driving high-power motors.Now let’s discuss the working principle of IPN030N10N3GXKSA1. It is a three-terminal MOSFET device consisting of a source, gate and drain. The source is connected to the power supply/Vcc and the gate is connected to the control terminal which is usually connected to the power switch. In control mode, the source-drain current I(D) is controlled and regulated by the logic voltage applied to the gate terminal V(gs), which can be modulated by the power switch. When the gate voltage is low, the MOSFET is OFF, so no current will flow through the source-drain path. When the gate voltage increases, the channel under the gate is turned ON and the current I(D) starts to increase.The MOSFET has excellent gain characteristics, which provides high speed switching response and low temperature dependence. Moreover, the MOSFETshows no pinch-off voltage and negative temperature coefficient, so it is perfect for large current switching applications. In addition, the MOSFET has low gate charge, which makes it suitable for large or small power applications. The IPN030N10N3GXKSA1 is suitable for a wide variety of electrical and electronic applications such as LED drivers, motor control, fan control, switching regulators and more. It offers high power, low off-state leakage current, low total gate charge and fast switching times. Therefore, it is an excellent choice for large and small power applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description