Allicdata Part #: | IPP032N06N3GXKSA1-ND |
Manufacturer Part#: |
IPP032N06N3GXKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 120A TO220-3 |
More Detail: | N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-... |
DataSheet: | IPP032N06N3GXKSA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 118µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 188W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13000pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPP032N06N3GXKSA1 is a 30 Volt N-Channel MOSFET that is comprised of a single N-Channel, Enhancement Mode, loadbearing power MOSFET packaged in a TO-263 package. This MOSFET operates by allowing for low on-state resistance, making it suitable for use in a wide range of applications. The IPP032N06N3GXKSA1 is rated for a continuous drain current of 7A, a max pulse current of 24A and is capable of withstanding drain-source voltages up to 30V. Thus, the IPP032N06N3GXKSA1 is suitable for use in a wide range of applications, such as switching power converters, DC/DC converters, switch mode power supplies and motor control applications.
The IPP032N06N3GXKSA1 MOSFET operates as a voltage controlled switch. The gate terminal acts as a control input that activates and deactivates the MOSFET, controlling the system’s drainage pathways. When activated, the gate becomes charged and creates a conductive channel between the drain and source. This allows the path from drain to source to be disconnected, effectively functioning as an on-off switch. Likewise, when the gate voltage is discharged, the current between the drain and source is interrupted and the MOSFET is functioning as an open circuit.
With its uniquely low on-state resistance, the IPP032N06N3GXKSA1 MOSFET can be used in a wide range of management and power applications, such as rapid switching, high frequency switching, and power switching applications. It is well suited for use in DC/DC converters, switch mode power supplies, motor control and switching power converters, as well as in control systems. The IPP032N06N3GXKSA1 also has high current capability, a fast switching speed and excellent paralleling capability. It’s ability to handle high power makes it an ideal choice for use in high power applications.
The IPP032N06N3GXKSA1 MOSFET is an excellent choice for power management and high power applications. Its low on-state resistance, high current handling capability and fast switching speed make it well suited for use in a wide range of applications, such as switching power converters, motor control applications, high-frequency switching and DC/DC converters. Its ability to handle high power also makes it an ideal choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
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