Allicdata Part #: | IPP037N08N3GE8181XKSA1-ND |
Manufacturer Part#: |
IPP037N08N3GE8181XKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 100A TO220-3 |
More Detail: | N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-... |
DataSheet: | IPP037N08N3GE8181XKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 155µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8110pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.75 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The world of electronics is constantly evolving and the various advancements that are being made are allowing for smaller and more powerful components, with fewer components to be used in the same application. The IPP037N08N3GE8181XKSA1 is such an example. This device is a single transistor, typically a MOSFET, that has a wide range of applications and is increasingly being used due to its ability to offer reliable performance at a reasonable cost.
The most common uses for the IPP037N08N3GE8181KSA1 are for switching circuits and for driving high-power loads, such as motor-drivers and motor-drivers for solenoids. This MOSFET also has applications in audio amplifiers, battery chargers, high-voltage rectifiers, DC motor control, and many other power management and control applications. Due to its ability to handle both low side and high side switching, this is an ideal transistor for many applications.
This transistor operates according to a FET or Field Effect Transistor. FETs are transistors or electronic switches that work by using an insulated gate to control the flow of electrons between the source and drain terminals. The insulated gate is responsible for allowing the transistor to turn on and off, as it’s voltage is varied. By selecting the proper gate voltage, the amount of current that can flow through the device can be controlled.
In the case of the IPP08N3GE8181KSA1, the voltage that is applied to the gate is what determines whether the device is turned on or off. This is known as the threshold voltage. When the voltage applied to the gate exceeds the threshold voltage, a current begins to flow from the source to the drain. If the voltage falls below the threshold, the device will turn off and no current will flow.
A key feature of the IPP08N3GE8181KSA1 is its voltage handling capability. As a MOSFET, this device can operate with either an n-Channel or p-Channel so it can be used for uni-polar as well as bi-polar operation. For example, if this transistor was used in a motor-driver application, the necessary voltage range could be supported even if the control logic produces both positive and negative voltages.
The IPP08N3GE8181KSA1 also has a low on-resistance, meaning that it can pass large currents when it is on. This makes it well suited for applications requiring high switching frequency and fast switching, such as motor-drivers. This transistor also has high breakdown voltages so it can be used to control large loads.
In conclusion, the IPP08N3GE8181KSA1 is a versatile single transistor that is ideal for a wide range of applications, particularly those involving high current or high voltage. Its low on-resistance and voltage handling capability allow it to be used in applications that require fast switching and low noise. The fact that it can operate with both p-Channel and n-Channel makes it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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