Allicdata Part #: | IPP037N08N3GHKSA1-ND |
Manufacturer Part#: |
IPP037N08N3GHKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 100A TO220-3 |
More Detail: | N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-... |
DataSheet: | IPP037N08N3GHKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 155µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8110pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.75 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPP037N08N3GHKSA1 is a state-of-the-art semiconductor that belongs to a family of FETs and MOSFETs comprised of single devices. This high-performance, low-power component is designed to meet today\'s demands for application-specific devices that offer supreme circuit characteristics and dependability. Its application fields and working principle can be further examined in the sections below.
Application Fields
The IPP037N08N3GHKSA1 can be implemented in various applications, including power switches, audio amplifiers, high-frequency converters, and automotive device components. As an alternative to larger transistors, this semiconductor provides greater power savings due to its low-power consumption. Furthermore, it provides a high-temperature rating, ensuring safe and reliable operation under extreme conditions. Finally, with its durable and reliable construction, it can provide reliable power switching over the long term.
Working Principle
This semiconductor features N-channel MOSFET technology. This type of technology works by using an adjoining gate electrode to control its current flow. When the gate voltage rises above a certain level, it begins conducting current through an N-channel. The higher the gate voltage, the more current flows through the N-channel and the lower the gate voltage, the less current passes through.
The IPP037N08N3GHKSA1 also features an efficiency ratio between the on-state channel resistance and the off-state channel resistance (Ron/Roff). This efficient property allows the semiconductor to operate at a higher voltage level with a lower dynamic on-state resistance than its competitors. Due to this characteristic, the semiconductor can provide up to 35% power savings for its targeted applications.
Conclusion
The IPP037N08N3GHKSA1 is a single and highly efficient MOSFET device capable of satisfying today’s demand for low-power and high-temperature operating components. It features an impressive efficiency ratio and can be applied in various scenarios including audio amplifiers, power switches, and automotive components. Furthermore, it offers exceptional on-state channel resistance and can provide up to 35% power savings compared to traditional transistors.
The specific data is subject to PDF, and the above content is for reference
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