Allicdata Part #: | IRFI530GPBF-ND |
Manufacturer Part#: |
IRFI530GPBF |
Price: | $ 1.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 9.7A TO220FP |
More Detail: | N-Channel 100V 9.7A (Tc) 42W (Tc) Through Hole TO-... |
DataSheet: | IRFI530GPBF Datasheet/PDF |
Quantity: | 775 |
1 +: | $ 1.39230 |
10 +: | $ 1.25748 |
100 +: | $ 1.01071 |
500 +: | $ 0.78609 |
1000 +: | $ 0.65133 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 5.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFI530GPBF is a N-Channel Enhancement Mode Field Effect Transistor (FET). It is a single transistor device, and is widely used in low- and medium-power applications, particularly in applications where a higher power gain and better efficiency is desired. This article will discuss the application field and working principle of IRFI530GPBF.
IRFI530GPBF is a popular choice for applications such as power management, automotive, and consumer electronics. Its main application is as an efficient power switch in portable electronic equipment and other low-power applications. Its excellent performance, power handling capability, and efficiency ratings make it an excellent choice for portable electronic devices. Additionally, IRFI530GPBF can be used for DC/DC converters, backlight inverters, lighting applications, and other switching applications.
The working principle of IRFI530GPBF is based on the principle of field effect transistor (FET). A FET is a voltage-controlled current source, which is subject to the control of a gate bias voltage. This gate bias voltage is applied to the gate of the transistor, which then controls the flow of the current through the channel created between the source and the drain of the FET. As the gate bias voltage changes, the current flow through the FET\'s channel changes accordingly.
When the gate voltage is positive, the current flow through the transistor is inhibited. This is known as the OFF state of the transistor. On the other hand, when the gate voltage is lowered, the current flow through the transistor is enhanced. This is known as the ON state of the transistor. This is the basic function of the FET.
The application of IRFI530GPBF is mainly found in automotive, consumer electronics, and industrial power applications. In automotive applications, it is used to switch power in various applications such as headlights, engines, and other systems. In consumer electronics, it is used as an efficient power switch for portable electronic equipment such as tablets, smartphones, and laptops. In industrial applications, it is used to switch power for various apparatus such as motors, pumps, and other electrical equipment.
In summary, IRFI530GPBF is a single transistor device with N-Channel Enhancement Mode Field Effect Transistor (FET) characteristics. It is widely used in automotive, consumer electronics, and industrial power applications due to its power handling capability and efficiency ratings. The working principle of IRFI530GPBF is based on the principle of field effect transistor (FET) wherein a gate bias voltage is applied to the gate of the transistor, which then controls the flow of the current through the channel created between the source and the drain of the FET.
The specific data is subject to PDF, and the above content is for reference
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