Allicdata Part #: | IRFI614GPBF-ND |
Manufacturer Part#: |
IRFI614GPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 2.1A TO220FP |
More Detail: | N-Channel 250V 2.1A (Tc) 23W (Tc) Through Hole TO-... |
DataSheet: | IRFI614GPBF Datasheet/PDF |
Quantity: | 980 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 23W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFI614GPBF Application Field and Working Principle
IRFI614GPBF is a 600V N-Channel MOSFET transistor manufactured by Infineon Technologies, with current ratings up to 25A at 25°C and up to 4A at 150°C. The device is characterized by low on-state resistance, high-frequency capability and excellent thermal performance. IRFI614GPBF has an integrated electro-static discharge protection which eliminates the need for extra external circuitry, and it is certified to withstand high-humidity environments and extreme temperatures.
The IRFI614GPBF is mainly used in high-power switching applications, such as in electrical power equipment, automotive electronics and consumer applications. It offers superior reliability and safety compared to conventional transistors, as it can withstand higher voltages and current ratings. It is typically used in DC-DC converters, motor switching and amplifiers, as well as in automotive power train applications.
Working Principle
The IRFI614GPBF is an N-channel MOSFET, which means the channel between the drain and source is an N-type semiconductor material. When a voltage is applied to the gate, it causes a conductive layer of electrons to form, allowing current to flow from the drain to the source. When the applied voltage is removed, the electrons are depleted, preventing current from flowing.
The IRFI614GPBF is also capable of operating at high-frequencies, meaning it can switch from "on" to "off" in a fraction of a millisecond. This is a great advantage in switching applications, as it can reduce switching losses and improve overall efficiency. It also offers protection against over-current and over-voltage, as it can quickly shut down when the conditions become dangerous.
In addition, the IRFI614GPBF has an integrated electro-static discharge (ESD) protection, which prevents it from being damaged by static electricity. This feature is especially important in consumer electronics and automotive applications, where there is an increased risk of exposure to ESD.
Advantages
The extensive range of benefits of using an IRFI614GPBF MOSFET make it an ideal choice for high-power switching applications. Some of the main advantages include:
- High-speed switching capabilities
- Low on-state resistance
- Excellent thermal performance
- High-frequency capability
- Integrated ESD protection
- High reliability and safety
- Suitable for DC-DC converters and motor switching applications
Disadvantages
As with any technology, the IRFI614GPBF also has some drawbacks. These are:
- Higher cost compared to conventional transistors
- High gate capacitance causing slow switching times when operating at low frequencies
- High gate leakage
- Device may be damaged by the ESD protection mechanism
In conclusion, the IRFI614GPBF is a high-performance MOSFET which offers superior reliability and safety in high-power switching applications, such as DC-DC converters, motor switching and amplifiers. It is characterized by low on-state resistance, high-frequency capability, excellent thermal performance and an integrated electro-static discharge protection mechanism. While it is more expensive than conventional transistors, its performance features make it ideal for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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