Allicdata Part #: | IRFI840GLC-ND |
Manufacturer Part#: |
IRFI840GLC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 4.5A TO220FP |
More Detail: | N-Channel 500V 4.5A (Tc) 40W (Tc) Through Hole TO-... |
DataSheet: | IRFI840GLC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 2.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFI840GLC is a powerful and versatile Field Effect Transistor (FET) designed for a variety of applications. It is a standard, single N-Channel enhancement-mode field-effect transistor that uses planar technology and utilizes a novel Insulated Gate to create a low threshold voltage. This low threshold voltage makes it ideal for applications requiring low to moderate switching speeds, such as amplifier stages and audio stage amplifiers, as well as for other high-precision FET devices such as oscillators.
The IRFI840GLC is very flexible in its application range. It can be used for various types of switching devices, protecting circuits from overvoltage and providing a steady current source. In addition, this transistor is capable of providing large amounts of power for fast switching applications, such as switching power supplies and motor controllers. Additionally, this FET works well for small signal amplifiers, filling gap between the low power range of FETs and the high power range of bipolar transistors.
The IRFI840GLC features a low on-state resistance, which makes it ideal for switching applications that require a high degree of accuracy. It is also extremely robust and can easily adjust to changes in voltage and temperature. Its relatively low cost also makes it an attractive choice for many applications.
The working principle of the IRFI840GLC is relatively simple. It utilizes two transistors that are connected in series, forming a double-gate structure. This structure creates a potential barrier that prevents currents from flowing in one direction and allows them to flow in the other. This feature is used for applications such as signal amplifier stages and digital logic gates, where it can effectively filter out unwanted signal components.
The IRFI840GLC is also used to provide isolation between circuits, helping to protect sensitive circuits from being damaged due to interference from external sources. It is also used in power converters, helping to regulate and smooth out the current output from a converter. In addition, this FET is used in telecommunication and automotive electronics, where its high on-state current capability is necessary for various applications.
The IRFI840GLC is a powerful and versatile Field Effect Transistor that can be used in a variety of applications. Its low threshold voltage and low on-state resistance make it ideal for applications that require precision switching and isolation. It is also highly reliable and cost-effective, making it an attractive choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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