![IRFI9630G Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRFI9630G-ND |
Manufacturer Part#: |
IRFI9630G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 200V 4.3A TO220FP |
More Detail: | P-Channel 200V 4.3A (Tc) 35W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFI9630G is a six-pin, N-Channel, low-voltage, 500V MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that comes in a TO-220 package. It is manufactured by Infineon Technologies, one of the leading suppliers of advanced semiconductor technology. This type of MOSFET is used in a variety of applications, including power conversion, power amplifiers, switching regulators, load switches, and in various other devices.
The IRFI9630G is an ideal solution for applications that require efficient energy handling. It provides a high degree of flexibility in terms of design specifications and can be used with different applications. The device’s low-voltage range makes it suitable for use in low-voltage and low-power designs. It also supports a wide range of operating temperatures, so it can be used in hot or cold environments. The device is also very resilient and can withstand voltage spikes.
The IRFI9630G is a single field-effect transistor (FET) that features an N-type conduction channel between its source and drain. This allows for high speed, power efficiency and reduced current consumption. The transistor is designed with a specially engineered vertical structure that minimizes gate charging and allows for the lowest on-resistance possible, thus enabling greater transistor efficiency. The device’s gate-to-source voltage is also optimized for quicker switching times.
The IRFI9630G is an excellent choice for applications that require fast switching speeds and power efficiency, such as step-down power converters, power amplifiers, and load switches. In addition, the device can also be used in low-noise applications, thanks to its low-noise design and its ability to operate at high frequencies. The device is also suitable for use in high-temperature applications, as it can withstand high-temperatures and remain stable. It also features a soft-body structure that helps absorb external impacts, making it a reliable device for demanding applications.
In summary, the IRFI9630G is a powerful and reliable MOSFET that is suitable for a variety of applications. It has a special vertical structure that enables greater power efficiency and fast switching times. It also has a wide range of operating temperatures and can handle voltage spikes. In addition, the device can be used in both high- and low-noise applications, thanks to its low-noise design and its ability to operate at high frequencies. The IRFI9630G is an ideal solution for a wide range of applications.
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