IRFIBC40GLCPBF

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IRFIBC40GLCPBF is an enhancement-mode MOSFET of N-channel, designed for high-speed switching applications. It is characterized by a low-on-resistance, as well as a low drain-source capacitance. Inside, it is built from a combination of fastened insulated-gate elements, enabling its performance to reach over five hundred kHz in saturated switching conditions, making it an ideal option for computer CPUs.

The N-channel MOSFET comes in a SuperSO-8 Package, a 8-pin surface mounted plastic case with leads extending from each side. It has a dielectric withstanding voltage (VGS) of 30 V and a drain-source withstanding voltage (VDS) of 400 V. In addition, each pin is held at a certain voltage, with a drain gate source of 1 V, a source gate source of 0 V, and a gate source of -2 V.

Application-wise, IRFIBC40GLCPBF is especially well-suited for supplying power to circuits with low voltage, wide voltage range (31.2-44 V), and low power consumption. Additionally, it is a great choice for energy-efficient motors and drives, as it provides an output which is free of any EMI noises and a very low heat dissipation, allowing it to be used even in the most extreme conditions. Last but not least, its features make it suitable for power-supply circuits for voltage level shifting when used with a matched pair.

In terms of working principle, IRFIBC40GLCPBF is based on a MOSFET structure, which consists of two separate regions between the drain and the source. Each region contains an insulated gate, which is used for controlling the amount of current flow. When a small external electric field is established, the insulated gate generates a voltage drop across it, thus creating a channel through which current can pass. The electric field also controls the presence of the “on-state”, which appears at a drain-to-source voltage of 2 V.

In conclusion, IRFIBC40GLCPBF is an ideal choice when it comes to providing power to low-voltage and high-speed circuits. Its N-channel MOSFET built in SuperSO-8 package allows it to draw a current of 40A, withstanding voltage of 400 V, and switching frequency of up to 500 kHz in saturated switching conditions. Moreover, its working principle based on insulated gates allows for a voltage drop in order to create a channel for current passing, thus supplying power to the most demanding electricity-related elements.

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