
Allicdata Part #: | IRFR014TRLPBF-ND |
Manufacturer Part#: |
IRFR014TRLPBF |
Price: | $ 0.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 7.7A DPAK |
More Detail: | N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.51000 |
10 +: | $ 0.49470 |
100 +: | $ 0.48450 |
1000 +: | $ 0.47430 |
10000 +: | $ 0.45900 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 4.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFR014TRLPBF is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is specifically designed for high power applications and is widely used in many power switching and control circuits. It has an excellent RDS(ON) of 0.52 Ohm and low gate charge of 3.5 nC, making it a great choice for applications where switch-on loss must be kept low and switching speed should be increased. This FET is also widely specifed for PWM (Pulse Width Modulation) applications.
IRFR014TRLPBF application field and working principle
IRFR014TRLPBF is widely applied in consumer/industrial, automotive and power management applications. In consumer/industrial applications, it is commonly used as a power switch which is capable of controlling the power flow between the power source and the power load, such as home appliances and lighting control; In automotive applications, it is used to drive heavy loads such as pumps, servos and relays; In power management applications, it is used to drive large motors, solenoids and lamps.
The basic principle of operation of IRFR014TRLPBF is that it works on the principle of Electrostatic. It Create an Asymmetrical Barrier between the source and drain by applying a voltage to the Gate. A Positive voltage will repel electrons from the drain to the source and thus create an Asymmetrical barrier. This in turn creates an electric field between the source and drain which is called the "Depletion Region". This depletion region allows for the semiconductor MOSFET to be used as a switch, controlling the flow of current without the use of a physical mechanical contact. As the voltage applied to the gate is increased, the depletion region increases, increasing the resistance between the source and drain until it ultimately turns off the device.
In addition to functioning as a switch, the MOSFET can also be used as an amplifier if it is used as part of an amplifier circuit. In this type of circuit, the gate voltage is used to control the current flowing through the device. By controlling this current, the amplitude of the signal input into the device can be controlled.
IRFR014TRLPBF also has the ability to handle high voltage leakage, which is crucial in applications such as automotive and power management. The device is designed to handle up to 1KV of peak voltage, making it an ideal choice for applications where high voltage leakage is a concern.
IRFR014TRLPBF also operates at very low gate capacitor values, which translates to lower gate triggering times. This low gate charging time is important for applications where speed is of the essence. For example, in a motor drive circuit, a quick gate triggering time can help reduce the amount of time it takes to get the motor up to speed.
All of these factors combined make the IRFR014TRLPBF a great choice for applications requiring power switching and/or control circuits. It is widely specifed for consumer/industrial and automotive applications and is also widely used in power management applications, due to its excellent performance characteristics.
The specific data is subject to PDF, and the above content is for reference
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