IRFR224TRPBF Allicdata Electronics
Allicdata Part #:

IRFR224PBFTR-ND

Manufacturer Part#:

IRFR224TRPBF

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 3.8A DPAK
More Detail: N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surfa...
DataSheet: IRFR224TRPBF datasheetIRFR224TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.27000
10 +: $ 0.26190
100 +: $ 0.25650
1000 +: $ 0.25110
10000 +: $ 0.24300
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFR224TRPBF (International Rectifier Field-effect Transistor Revision 224) is a single-channel, voltage-controlled heterojunction of type Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is typically used as part of a signal conditioning circuit or as a power amplifier.

This MOSFET device has a drain-source (d-s) breakdown voltage of 225 Volts and a continuous drain current of 7.5 Amperes. It is housed in a TO-254 package and may be operated at a temperature range between -55 and 150 degrees Celsius. The IRFR224TRPBF differs from a traditional MOSFET in that it has a gate-source breakdown voltage far greater than that of a standard MOSFET. This makes it ideal for applications where gate-source voltage exceeds the limit of a standard MOSFET.

The primary application of the IRFR224TRPBF is as a signal conditioning component in voltage and current measuring circuitry. It is also used in power amplifier applications where a higher gate-source breakdown voltage is required. The MOSFET device can serve as a switch to control the current flow between two points of a circuit, enabling precise control of current.

The working principle of the IRFR224TRPBF is quite simple. The device contains an insulating layer between the gate and source of the MOSFET. This insulating layer is called a gate dielectric and it has a very high resistance. A voltage between the gate and source causes a current in the gate, which then controls the current flow between the drain and source. When the gate voltage increases, the current between the drain and source increases as well. This mechanism enables voltage or current control of the current flow between the drain and source.

The IRFR224TRPBF can be used in a wide range of applications, including signal conditioning, current or voltage control, and power amplification. The device is well known for its high current carrying capacity, high breakdown voltage, low switching losses, and high switching speeds. Additionally, the device is versatile, easy to use, and has a wide operating temperature range. This makes it an ideal choice for various industrial, automotive and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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