IRFR3704TR Allicdata Electronics
Allicdata Part #:

IRFR3704TR-ND

Manufacturer Part#:

IRFR3704TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 75A DPAK
More Detail: N-Channel 20V 75A (Tc) 90W (Tc) Surface Mount D-Pa...
DataSheet: IRFR3704TR datasheetIRFR3704TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFR3704TR is a high-voltage and high-current power MOSFET transistor specifically designed to meet the requirements of high-current automotive applications such as Electronic Throttle Control (ETC) systems and other powertrain applications. It is a single N-channel enhancement-mode MOSFET transistor with a maximum RDS(on) value of 0.004Ω. This MOSFET transistor is manufactured using IXYS’s proprietary MOSFET technology, which utilizes a planar diffusion process and extremely low on-resistance along with low gate charge. It is also rated for an exposure to harsh automotive temperatures, ranging from -55 to + 175°C.

The IRFR3704TR is an excellent choice for automotive applications that require a high on/off switching speed, low gate charge, low on-resistance, and a simple yet robust construction. Its RDS(on) value of 0.004Ω makes this MOSFET suitable for applications where low voltage drop-off is highly desired. In addition, its rated current handling capability of 290A and gate charge rating of 128nC makes it a great choice for high-current switching and control applications such as ETC systems. Another benefit of this MOSFET transistor is its maximum peak transient avalanche current rating of 8.3A, which provides additional safety and endurance when switching high voltages and currents.

The working principle behind the IRFR3704TR MOSFET transistor is simple yet effective. Essentially, the transistor is composed of two N-channel MOSFETs, a control gate and a drain. The control gate adjusts the amount of current flowing through the MOSFET by controlling the effective resistance of the channel. The current flows between the source and the drain, and is regulated by the gate voltage. When the voltage applied to the gate is low, then the current is low, but when the voltage is raised, the resistance of the channel is lowered, and the current is allowed to flow freely.

Overall, the IRFR3704TR MOSFET transistor is an ideal choice for high-current automotive applications such as ETC systems. Its low on-resistance, high current handling capability, and reliability make it a great choice for any application. Additionally, its working principle is simple yet effective, and provides a great balance between performance and cost.

The specific data is subject to PDF, and the above content is for reference

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