IRFR1018EPBF

Vgs(th) (Max) @ Id:	4V @ 100µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2290pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	69nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8.4 mOhm @ 47A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	56A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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<p>The IRFR1018EPBF is a Power MOSFET manufactured by International Rectifier that is intended for use in a wide range of applications. The device is composed of a single N-Channel MOSFET with an on-resistance of 0.4 V. The device is capable of sustaining such high levels of current up to 120 Amps, and is also adept at low-NOX (Nitrous Oxide) operations.</p><p>The primary application of the IRFR1018EPBF involves power switching and distribution, where the MOSFET can be used to control the current through a system or circuit. This is useful in a variety of industrial and consumer applications, such as appliances, computers, automotive systems and entertainment systems. Such a device can also be used in audio and power circuit design, where the device’s high-power and low on-resistance can help reduce heat and reduce power consumption.</p><p>The working principle of the IRFR1018EPBF involves using an oxide-insulated N-Channel MOSFET in order to control the flow of current through the device. A MOSFET is a voltage-controlled device, meaning that a small voltage applied to the gate will cause a much larger voltage to be applied to the device drain. This allows the device to be used as a switch, allowing the user to control the current flow through the device. The IRFR1018EPBF has a very low on-resistance, meaning that it has very low power consumption when used in switching applications and can help reduce the power consumption of a given system or circuit.</p><p>The IRFR1018EPBF is a popular choice for industrial and consumer applications due to its high current handling and low-NOX capabilities. Its very low on-resistance makes it an excellent choice for power switching and distribution solutions, as well as for audio and power circuit design. By utilizing the principles of MOSFETs, the IRFR1018EPBF is able to function as an effective voltage-controlled switch, allowing the user to control the current flow through a system or circuit with a very low amount of power consumption.</p>

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