IRFR1N60A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFR1N60A, or International Rectifier Field-Effect Transistor series, is a low-threshold field-effect transistor (FET) series with a broad range of uses. The IRFR1N60A is categorized as a single MOSFET (metal–oxide–semiconductor field-effect transistor), and has a variety of applications such as robotics, power management, and audio and video systems.

The IRFR1N60A has a source-drain current rating of 4.5A and a Vds of 600V, which enables it to handle high currents and voltages. The drain-source on-resistance of the IRFR1N60A is 0.08 ohms (maximum), while the gate charge is a mere 0.2 nano-coulombs. This quality allows this FET to provide low-power dissipation and high-density switching.

TheIRFR1N60A has a number of advantageous features that make it well-suited for a wide range of applications. These features include excellent switching speeds, low gate-charge, and low drain-source on-resistance. Its relatively low threshold voltage and maximum drain-source breakdown-voltage also make the IRFR1N60A ideal for high voltage applications.

The working principle behind the IRFR1N60A is quite simple. This particular FET is based on the principle of controlling the flow of current with an electric field. A gate-voltage is applied to the gate terminal, which produces an electric field that turns on and off the channel between the source and the drain. When the gate voltage is below the threshold level, the FET is off, and no current will flow between the source and the drain. When the gate voltage is above the threshold level, the FET is on, and a current will be able to flow through the channel.

Dimension wise, the IRFR1N60A is quite compact and is suitable for a wide range of applications. It’s a small size device with mounting pads that make the components more userfriendly. It comes in theTO-220AB package. The IRFR1N60A is a very cost-effective FET, meaning that it can meet any budget requirements. This FET is well suited for switching applications, where fast switching times and low-on resistance are desirable.

The IRFR1N60A has a number of advantages that make it suitable for a multitude of high-power and high-voltage applications. It is able to handle high currents and voltages, and has a low gate-charge and drain-source on-resistance. Its small size, low cost, and excellent switching speeds make it an ideal choice for applications such as robotics, power management systems, and audio/video systems.

The specific data is subject to PDF, and the above content is for reference