IRFR420TRPBF Allicdata Electronics

IRFR420TRPBF Discrete Semiconductor Products

Allicdata Part #:

IRFR420PBFTR-ND

Manufacturer Part#:

IRFR420TRPBF

Price: $ 0.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 2.4A DPAK
More Detail: N-Channel 500V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Surfa...
DataSheet: IRFR420TRPBF datasheetIRFR420TRPBF Datasheet/PDF
Quantity: 6000
1 +: $ 0.33000
10 +: $ 0.32010
100 +: $ 0.31350
1000 +: $ 0.30690
10000 +: $ 0.29700
Stock 6000Can Ship Immediately
$ 0.33
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFR420TRPBF is a 540 Ω N-Channel Enhancement Mode MOSFET designed for use in power supplies and other high-current, low-voltage applications such as solar energy inverters, motor controllers and switching power supplies. This device is designed specifically for operation at a wide range of temperature ranges and includes a built-in FET protection circuit which allows it to withstand large voltage and temperature variations without sacrificing performance. The IRFR420TRPBF has a high-efficiency switching time of 1.5ns and can be used with a variety of compatible circuits.

Some of the major strengths of the IRFR420TRPBF include its ability to handle larger voltage loads and switching times, as well as its capacity to handle high temperature operations with improved efficiency. This device is capable of operating over a wide range of temperatures, with its peak performance utilization occurring at 25°C. It is capable of withstanding operating temperatures from -40°C to 150°C. This device also offers a high-efficiency switching time of 1.5ns which significantly reduces the power consumption and increases the efficiency of the applications.

The IRFR420TRPBF is also known for its low ID, which refers to the amount of current that the device can handle during normal operation. This value is typically between 35–40mA which makes this device suitable for applications that require low currents. This low ID also reduces the power consumption and the thermal dissipation. Additionally, the device features a low gate charge of 4.5nC which ensures that switching energy remains within acceptable levels.

The device\'s use in numerous applications is enhanced by its efficient working principle. The IRFR420TRPBF is based on an enhancement-mode MOSFET design in which the device turns on when a voltage is applied to the gate. The device then allows current to flow from the drain to the source. This design offers increased efficiency and reliability, as well as an improved level of control. It is also capable of operating at a wide range of voltages, which makes it suitable for use in any application that demands the maximum control and precision.

The IRFR420TRPBF is a great choice for applications that require a high-efficiency, low-power MOSFET. Its wide range of working temperatures, efficient working principle, and low power consumption make it an ideal choice for applications that require high current, low voltage, and high reliability. This device is also suitable for applications that require high levels of control and precision, such as motor controllers and switching power supplies. In summary, the IRFR420TRPBF is an ideal choice for any application requiring a low power and low voltage MOSFET, with high efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference

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