
Allicdata Part #: | IRFR120NTRLPBFTR-ND |
Manufacturer Part#: |
IRFR120NTRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 9.4A DPAK |
More Detail: | N-Channel 100V 9.4A (Tc) 48W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFR120NTRLPBF is one of the most popular models offered by International Rectifier, a manufacturer of power semiconductor components. This device is a N-channel resistor-equipped metal-oxide-semiconductor Field Effect Transistor (MOSFET) designed to offer improved performance and extremely power efficiency. As such, the IRFR120NTRLPBF is a viable option for a wide range of applications, including motor controls, power lighting, and power switching.
A resistor-equipped MOSFET is constructed in the same way as a conventional MOSFET. However, the addition of a resistor between the gate and the source allows current to flow in and out of the gate, resulting in an increased voltage across the MOSFET, which improves the performance of the device. The IRFR120NTRLPBF is notable for its low total gate charge (QG), which is a measure of the amount of charge required to fully switch the device on or off. The low QG means that the power efficiency of the device is significantly improved, and this, combined with its low on-resistance, makes it ideal for high switching applications such as motor control.
The IRFR120NTRLPBF also has a maximum drain-source voltage (VDS) of 20V, and can handle a VGS of +/-20V, making it suitable for use in circuits operating at up to 400V. The thermal resistance rate (Rth) is also very low, which helps to prevent the IRFR120NTRLPBF from overheating. The Rth is an important parameter, as it is directly responsible for the rate at which heat is dissipated from the device; a low Rth will ensure that a greater amount of the heat generated by the device is dissipated, which in turn will extend the lifetime of the device.
In terms of its working principle, the IRFR120NTRLPBF operates in a similar fashion to other MOSFETs. When a voltage is applied to the gate, it creates a electrical field inside the semiconductor channel, which in turn is capable of controlling the flow of current between the source and the drain. In order for current to flow, however, the gate voltage must be greater than that of the source voltage, and the sum of these voltage levels is known as the threshold voltage (Vth). The IRFR120NTRLPBF has a Vth of 2.4V.
In terms of its application field, the IRFR120NTRLPBF can be used in a wide range of applications, such as power switching, motor control, and power lighting. Its low power consumption, low QG, and low Rth also make it suitable for use in a variety of low-power, electronic applications, including battery-powered devices, RF transmitters, and audio amplifiers. Additionally, its ability to handle high voltages makes it an ideal choice for high-voltage, motor control, and lighting applications.
All in all, the IRFR120NTRLPBF is a very capable device, and is suitable for a variety of applications. Its low power consumption, low QG, and low Rth make it an excellent choice for low-power, electronic applications, while its ability to handle high voltages makes it ideal for high-voltage, motor control, and lighting applications.
The specific data is subject to PDF, and the above content is for reference
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