IRFR7540TRPBF Allicdata Electronics
Allicdata Part #:

IRFR7540TRPBFTR-ND

Manufacturer Part#:

IRFR7540TRPBF

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 90A DPAK
More Detail: N-Channel 60V 90A (Tc) 140W (Tc) Surface Mount D-P...
DataSheet: IRFR7540TRPBF datasheetIRFR7540TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.36000
10 +: $ 0.34920
100 +: $ 0.34200
1000 +: $ 0.33480
10000 +: $ 0.32400
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: StrongIRFET™
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 66A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFR7540TRPBF is a single N-Channel Metal-Oxide Semiconductor Field Effect Transistor (MOSFET). The transistor is designed for high voltage and high current applications. This article will discuss the application field and workings principles of the IRFR7540TRPBF.

The IRFR7540TRPBF is a large-can MOSFET which features a low threshold voltage and high current ratings. The MOSFET provides the best combination of charge balance, low R_DS(on) and fast switching capabilities. Due to its high power handling capabilities, the MOSFET can be used in various applications such as DC-DC converters, automotive power trains, power supplies, and power converters. It is also widely used in both commercial and industrial systems for power control applications.

The working principle of the IRFR7540TRPBF is based on the electrical movement of charge carriers. The transfer of charge is determined by the Gate-Source voltage (VGS), which is determined by the gate current. The charge carriers, which are electrons and holes, interact with the gate and drain nodes. The current flows in the direction of the arrows. The Gate-Source voltage is the voltage difference between the Gate and Source nodes, and is typically used to control the device performance. When the Gate-Source voltage increases, it reduces the resistance of the channel and the current flows more easily.

The IRFR7540TRPBF transistor is available in a TO-220 package. This package allows for high current and high power ratings. It also includes an Erasable Programmable Read Only Memory (EPROM) to store information. The TO-220 package includes a Drain Source voltage rating of 70V and a maximum Drain Source current of 11A. The transistor also includes a maximum die temperature rating of 175°C, which makes it suitable for various temperature operating environments.

The IRFR7540TRPBF is one of the most popular MOSFETs on the market, due to its high reliability and performance. The transistor offers high current ratings and fast switching capabilities, as well as low R_DS(on). It is ideal for applications where high power and current are required, such as DC-DC converters, automotive power trains, and power supplies. The device is also suitable for industrial systems and power control applications.

The IRFR7540TRPBF is a popular MOSFET, due to its high current and power handling ratings, low threshold voltage, low R_DS(on), and fast switching capabilities. The device is suitable for various applications and is available in a TO-220 package. The transistor works by the electrical movement of charge carriers, and is regulated by the Gate-Source voltage. It is a reliable device for high power and current applications, and is becoming increasingly popular for commercial and industrial systems.

The specific data is subject to PDF, and the above content is for reference

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