
Allicdata Part #: | IRFR3710ZPBF-ND |
Manufacturer Part#: |
IRFR3710ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 42A DPAK |
More Detail: | N-Channel 100V 42A (Tc) 140W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2930pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 33A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRFR3710ZPBF is a type of Field Effect Transistor (FET) that is commonly used in many applications and as a single junction MOSFET. It is a very versatile device, with a wide range of uses, including power amplifiers, RF switches and impedance matching applications. This article will look at the IRFR3710ZPBF application field and the working principles behind it.
The IRFR3710ZPBF is a N-channel enhancement mode MOSFET, produced by International Rectifier, which has encapsulated their devices in the PowerPAK 1212-8 SMD package. This FET features extremely low RDS(on) values, allowing for higher efficiency in switching and amplifier applications. It also features a high maximum drain source voltage of 100V and a maximum drain current of 34A. This product was designed to handle high power with very low on-resistance, and it is a great choice for high current and high voltage applications, such as motor drives, DC-DC conversion, audio amplifiers, and many other applications.
The IRFR3710ZPBF works on the principle that when a small voltage is applied across its gate and source, it will turn on and enable current to flow from the drain to the source. This effect is called the “enhancement mode” because it requires a gate voltage higher than the source voltage to activate it. This FET has a threshold voltage of 3-4V and its RDS(on) is around 6.5 to 8mohm. It has a very fast switching speed, with a typical rise and fall time of 12-15ns. This device is capable of handling high frequencies up to 10MHz.
The IRFR3710ZPBF can be used in a variety of applications, such as power amplifiers, RF switches, and impedance matching applications. It is especially well suited for automotive applications, with its high drain source voltage and maximum DC current allowing it to be used in harsh electrical environments. Other uses include DC-DC converters, automotive lighting, and motor control. Its wide range of applications make it an attractive choice for many engineers.
In summary, the IRFR3710ZPBF is a powerful Field Effect Transistor with a wide range of applications. It is used in automotive, motor control, DC-DC conversion, and audio applications due to its low RDS(on) values, high voltage and current handling capability, and fast switching speed. It works on the principle of enhancement mode, and when the gate voltage is higher than the source voltage, it will allow current to flow. This makes it an ideal choice for many applications.
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