IRFR110TRLPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	180pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	540 mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.3A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to IRFR110TRLPBF Application Field and Working Principle

The IRFR110TRLPBF is an advanced single-gate Field-Effect Transistor (FET). This is an ultra-low-voltage device with a maximum drain-source breakdown voltage (BVds) of 110 volts. It is commonly used as a switch or a voltage-controlled resistor. This device is very versatile due to its low-voltage operation and excellent switching characteristics. Not only does it offer superior performance, but also improved energy efficiency. In this article, we will discuss the application fields and working principle of the IRFR110TRLPBF device.

Application Fields

The IRFR110TRLPBF device can be used in a wide range of applications, including power management and electronic circuits. In particular, the IRFR110TRLPBF device is suitable for switching and protection applications in power management systems, such as power sequencing and inrush current limiting. It is also suitable for voltage-controlled resistors in electronic circuits such as current sensors, current limiters, voltage regulators, and level shifters.

Working Principle

The IRFR110TRLPBF device is a voltage-controlled Field-Effect Transistor (FET). It is composed of a source, a drain, a gate, and a channel. When a voltage is applied to the source, a channel is formed between the source and the drain. This channel allows the flow of current from the source to the drain. When the voltage at the gate is increased, the channel is widened, allowing more current to flow. Conversely, when the voltage at the gate is decreased, the channel is narrowed and less current flows. This is how the IRFR110TRLPBF is used as a switch or a voltage-controlled resistor.

Conclusion

The IRFR110TRLPBF is a highly versatile single-gate Field-Effect Transistor (FET) with a low-voltage operation and excellent switching characteristics. This device can be used in a wide range of applications such as power management and electronic circuits. It can be used as a switch for power sequencing and inrush current limiting, or as a voltage-controlled resistor for current limiters, level shifters, voltage regulators, and sensors. The IRFR110TRLPBF is an excellent choice for low-voltage applications and is sure to provide superior performance.

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