| Allicdata Part #: | IRFR13N20DTRL-ND |
| Manufacturer Part#: |
IRFR13N20DTRL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 200V 13A DPAK |
| More Detail: | N-Channel 200V 13A (Tc) 110W (Tc) Surface Mount D-... |
| DataSheet: | IRFR13N20DTRL Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 235 mOhm @ 8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRFR130N20DTRL is a type of field-effect transistor (FET) that belongs to the family of MOSFETs (metal-oxide-semiconductor field-effect transistors). It is a single transistor, meaning it has just a single transistor embedded. The single-package design of the IRFR130N20DTRL makes it a more efficient choice for applications where the circuit only requires a single FET.
In electronic circuitry, a FET is used to amplify and also switch electronic signals. This is done by allowing a small control voltage or current to modify its conductivity, in order to allow or stop the passage of a much larger current (which is being controlled).
The IRFR130N20DTRL is a type of FET that can be classed as an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It works by having two connections to the N-channel. One of these creates a strong electric field between the P-type and N-type semiconducors. The device is then placed in either an ``off\'\' state or an ``on\'\' state. The resistance in the conduction channel is controlled by the electric field strength.
The IRFR130N20DTRL has a number of features that make it suitable for a variety of applications. For example, it has a drain-source voltage rating of 20V and a maximum drain current of 13A. It also has a very low on-resistance and is capable of operating over a wide range of temperatures. These features make it suitable for applications such as power conversion and motor control in industrial and automotive environments.
The IRFR130N20DTRL also has some intrinsic capacitance and body diode along with its low on-resistance and high drain current capabilities. These features make it particularly suitable for DC-DC converters, in which the device is used to dissipate transient power. It is also often used in 12V DC motor control applications due to its high efficiency and flexibility.
Lastly, the IRFR130N20DTRL also has a very high avalanche energy rating which ensures that the device can safely withstand high voltage and current spikes during operation. This makes it suitable for applications such as switch mode power supplies, where the device is used in switching and power control.
In summary, the IRFR130N20DTRL is a single-package FET that is suitable for a wide range of applications. Its low on-resistance, high drain current capabilities, intrinsic capacitance and body diode, along with its wide temperature range and high avalanche energy rating, make it suitable for a variety of power conversion, motor control, and switch mode power supply applications.
The specific data is subject to PDF, and the above content is for reference
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IRFR13N20DTRL Datasheet/PDF