
Allicdata Part #: | IRFR18N15DTRPBFTR-ND |
Manufacturer Part#: |
IRFR18N15DTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 18A DPAK |
More Detail: | N-Channel 150V 18A (Tc) 110W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFR18N15DTRPBF is a type of field-effect transistor (FET) developed by International Rectifier (IR). It is a well-known semiconductor device used to amplify or switch signals in many different applications. The IRFR18N15DTRPBF is classified as a single MOSFET due to the CMOS technology that is used to manufacture it. MOSFETs are one of the most popular types of FETs due to their low cost, high speed, and good power handling characteristics.
In order to Operational IRFR18N15DTRPBF, it must be connected in a circuit, with the gate and source terminals connected. The voltages applied to these terminals determine the amount of current that will flow through the device. The working principle of an IRFR18N15DTRPBF is based on the electric field created between the gate and the drain terminal which controls the current flow through the device.
The IRFR18N15DTRPBF is typically used in power switching applications as it is capable of carrying high currents. It is commonly used in DC to DC power converters, in low-noise amplifier applications, and in high-frequency switching applications. This type of MOSFET is capable of operating at high temperatures, making it ideal for high-temperature environments. Additionally, due to its high-performance levels, the IRFR18N15DTRPBF is suitable for use in industrial, automotive, and aerospace applications.
Due to its high current carrying capability, the IRFR18N15DTRPBF is often used in applications that require high-power switching. It is commonly found in motor control relays, low-loss power supply circuits, and high-voltage, low-voltage applications. Additionally, the IRFR18N15DTRPBF is often integrated into amplifier and oscillator circuits, as well as in digital circuits.
The gate terminal of the IRFR18N15DTRPBF is important, as it influences the gain of the device. By controlling the gate voltage and the current passing through the device, it is possible to adjust the gain and the switching speed of the FET. Additionally, due to its high-speed switching characteristics and low on-resistance, the IRFR18N15DTRPBF is often used in RF applications, such as RF amplifiers and receivers.
In conclusion, the IRFR18N15DTRPBF is a popular MOSFET device often used in low-noise amplifiers, power switching applications, and high-frequency switching applications. It is capable of operating at high temperatures and is suitable for use in industrial, automotive, and aerospace applications. Additionally, due to its high current carrying capability and its excellent switching speed, the IRFR18N15DTRPBF is suitable for use in RF amplifiers and receivers.
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