
Allicdata Part #: | IRFR220PBFTR-ND |
Manufacturer Part#: |
IRFR220TRPBF |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 4.8A DPAK |
More Detail: | N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 6000 |
1 +: | $ 0.25000 |
10 +: | $ 0.24250 |
100 +: | $ 0.23750 |
1000 +: | $ 0.23250 |
10000 +: | $ 0.22500 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFR220TRPBF is a transistor device with an integrated field-effect technology. It is a three-terminal selective device that often used to control current and regulate power in different applications.
The IRFR220TRPBF device is typically used in a variety of fields that require voltage regulation, such as power management, automotive, and industrial applications. This device is a single type N-Channel depletion-mode FET, meaning that it has a conductive channel between its source and drain electrodes when no gate voltage is applied. It is well suited for use as a switch, level shifter, voltage regulator, power supply, and many other common applications.
When the source electrode of an IRFR220TRPBF is connected to a lower potential than its drain electrode, an N-channel is created between them. However, the reverse is also true and can be used just as effectively. This type of FET can be used in a variety of configurations, including in voltage level shifters, voltage dividers, and voltage regulation.
The IRFR220TRPBF transistor also offers reliable electrical performance, with a breakdown voltage of 200 volts and an on-resistance of 35 milliOhms. This performance makes the IRFR220TRPBF an ideal choice for many applications. The off-leakage current is also excellent, with a maximum leakage current of 500nA. This low leakage current ensures that no current is drawn in the ‘off’ state, eliminating one of the most common sources of power consumption in many applications.
In addition to its excellent electrical performance, the IRFR220TRPBF also offers excellent thermal properties. It has a maximum junction temperature of 150°C, which is well suited for high-temperature applications. The device also features an operating temperature range of -55°C to 150°C, ensuring reliable performance in a wide range of environmental conditions.
Finally, the IRFR220TRPBF is remarkably robust, durable, and reliable. It has a maximum power dissipation of 1.5W and a maximum operating frequency of 4GHz, making it a very reliable choice for many applications. The device is also RoHS compliant and UL approved, ensuring excellent safety and product performance.
In summary, the IRFR220TRPBF is a reliable, durable, and efficient device that is well-suited for a variety of applications, including power management, automotive, and industrial applications. Its excellent electrical and thermal properties, combined with its small size and low power consumption, make it an ideal choice for many applications. With its excellent reliability and performance, the IRFR220TRPBF is a excellent choice for those who require a reliable, high-performance FET.
The specific data is subject to PDF, and the above content is for reference
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