
Allicdata Part #: | IRFR2307ZTRLPBF-ND |
Manufacturer Part#: |
IRFR2307ZTRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 42A DPAK |
More Detail: | N-Channel 75V 42A (Tc) 110W (Tc) Surface Mount D-P... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2190pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 32A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFR2307ZTRLPBF is an N-channel Single field-effect transistor (FET) that has been widely used in the electronics industry. It is mainly used to optimize the power flow, such as controlling the on/off of circuits. This field effect transistor is composed of four terminals, Gate (G), Drain (D), Source (S) and Body (B). Depending on certain conditions, it is possible to control current or voltage applied to the transmitting components.
Application Field
IRFR2307ZTRLPBF can be used in many fields, especially in those related to electronics. In the regions of high performance switching applications, this device can be used as the switching device of semiconductor, doubling the capability of system speed with low power consumption. This largest transistor can also be used in power management and circuits requiring reverse blocking capability. Furthermore, this device is a good application for power conversion, such as a three-phase uninterruptible power supply system. IRFR2307ZTRLPBF provides fast switching speed and high temperature performance. In a motor drive system, it can also be used as a switching semiconductor which has higher power density that increases the motor efficiency and accuracy.
Working Principle
This N-channel Single FET works using the principle of electric field effect. It receives electric current or voltage to the Gate terminal - when voltage and current are applied in the Gate (G), a thin layer of negative charge is formed in the Channel region and also creates an electrostatic field. This change in voltage and/or current causes a shift in the electrostatic field, which creates a conductive path for current to flow from Source (S) to Drain (D). No current can flow between Drain and Gate in the off state, which does not allow direct current to flow from the drain circuit to the gate circuit. This is how the transistor regulates the current and voltage in the circuit, making it a very suitable device for controlling in various applications.
In addition, this single FET also has a body (B) terminal which operates as one of the electrodes to the transistor. The body terminal helps to adjust the threshold voltage and also stabilize current in the channel. With a voltage applied to the body terminal, the transistor switches off and a voltage applied to the gate can turn the transistor back on. The body terminal also helps to adjust the ability of transistor to drive current.
Conclusion
The IRFR2307ZTRLPBF N-channel Single FET is strong, capable, and applicable in many areas, such as motor drive systems, power management and control, power conversion, and switch control. It is important to understand its application field and working principle, which is based on electric field effect and the controlling capability at its four terminals. The Gate (G) terminal is used to control the voltage or current, the Drain (D) terminal carries the major current, the Source (S) provides a path back to the original source, and the Body (B) terminal helps to adjust the threshold voltage and stabilize current in the channel.
The specific data is subject to PDF, and the above content is for reference
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