IRFR310PBF Allicdata Electronics
Allicdata Part #:

IRFR310PBF-ND

Manufacturer Part#:

IRFR310PBF

Price: $ 1.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 1.7A DPAK
More Detail: N-Channel 400V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Surfa...
DataSheet: IRFR310PBF datasheetIRFR310PBF Datasheet/PDF
Quantity: 441
1 +: $ 1.12140
10 +: $ 0.99288
100 +: $ 0.78454
500 +: $ 0.60844
1000 +: $ 0.48034
Stock 441Can Ship Immediately
$ 1.23
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFR310PBF is a N-Channel Power MOSFET commonly used in power supplies, motor control and signal processing applications due to its stability and good thermal performance. The device is a two-terminal insulated-gate field-effect transistor with a high-density semiconductor layer between the source and drain, acting as a low-impedance on/off switch.

Applications of the IRFR310PBF are as varied as the devices themselves, as it is a versatile MOSFET that offers excellent switching performance. Examples of such applications include high-voltage switching, DC-DC converters, motor control, electronic ballast controls and sound systems.

The device operates on a voltage gradient that allows it to rapidly switch high voltages on and off. This is done by applying the Gate-Source voltage (VGS or V_GS) in relation to the Drain-Source voltage (VDS or V_GS). When the VDS is greater than VGS, the device will be “on”, while if VDS is less than VGS, then the device will be “off”.

In this device, the V_GS is a DC voltage that is applied to the Gate-Source terminal and the V_GS is a DC voltage applied to the Drain-Source terminal. If the V_GS is greater than the device’s threshold voltage value (V_TH), the channel will be in an “on” state, allowing current to flow from the Drain-Source terminal to the Source-Gate terminal and the MOSFET is said to be “open”. Conversely, if the V_GS is less than the V_TH, the channel will be in an “off” state, preventing current flow and the MOSFET is said to be “closed”.

The device has a low threshold voltage and low input capacitance, making it suitable for high-frequency applications. It also has a high transconductance and low input resistance, making it suitable for driving large capacitive loads. Additionally, it operates in a wide temperature range and is able to withstand high temperatures with low thermal resistance.

The IRFR310PBF is an ideal choice for applications that require simultaneous switching and high performance in a small package size. It is suitable for driving high-voltage applications and is a reliable switch for on/off switching applications.

The specific data is subject to PDF, and the above content is for reference

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