IRFR3910TRPBF

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IRFR3910TRPBF is a high channel power metal oxide semiconductor field-effect transistor (MOSFET). This transistor is created using the latest advanced low voltage process with strong focus on low gate charge and low on-state resistance. IRFR3910TRPBF is one of the most preferred choice in designing solutions for high current applications.

Application Field of IRFR3910TRPBF

IRFR3910TRPBF is mainly used in battery operated applications, regulators and converters as well as various long life, low power consumption and high efficiency applications. It can be used in iPad/iPhone charge solutions, tablet pc solutions, notebooks, digital cameras, mobile phones and other portable electronic devices. It is also a widely used power transistor for electric vehicles, armed vehicles, aviation, electric power, railway transportation, medical device and other special fields.

Some of the common applications for the IRFR3910TRPBF are:

• AC/DC and DC/DC conversion
• Power management circuits in portable electronic devices
• High current synchronous buck converters
• Telecommunications
• Automotive electronics
• Industrial devices
• Battery operated appliances

Working Principle of IRFR3910TRPBF

IRFR3910TRPBF is a type of Power Metal-Oxide-Semiconductor Field-effect Transistor (MOSFET) with a source-drain breakdown voltage rating of 30V. It has excellent on-resistance and low gate charge, which makes it ideal for high current applications. It is a Negative Channel Enhancement (NCE) type MOSFET, which means that the conductive channel is created when the gate-source voltage decreases, i.e. when a negative voltage is applied to the gate, the current flow from the source to the drain increases.

The IRFR3910TRPBF has an ESD (Electrostatic Discharge) protection. In addition, the source-drain breakdown voltage is guaranteed up to 5V, which ensures that the device will not be damaged by static electricity.

The IRFR3910TRPBF has a maximum operating temperature of 150 degrees Celsius. This is higher than most MOSFETs, which makes it ideal for applications where high temperature is expected, such as automotive and industrial applications.

The IRFR3910TRPBF has a low gate charge, which helps reduce the power required to open the switch in the device. This results in a lower overall power consumption, which is desirable for many applications.

The IRFR3910TRPBF can sustain maximum current ratings of up to 18A, making it capable of supporting high current applications. The maximum Design Input Power is up to 20W. This feature makes the IRFR3910TRPBF an ideal choice for applications that require high power.

The IRFR3910TRPBF is manufactured using the advanced low voltage process. This process helps in reducing the gate charge as well as the on-state resistance, resulting in improved efficiency and better performance.

Conclusion

IRFR3910TRPBF is a high-performance MOSFET with excellent properties, making it an ideal choice for high current applications. It has an ESD protection, a maximum operating temperature of 150 degrees Celsius, as well as a low gate charge. Additionally, it is manufactured using the advanced low voltage process, which makes it an optimal choice for many applications.

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