IRFR4104TR Allicdata Electronics
Allicdata Part #:

IRFR4104TR-ND

Manufacturer Part#:

IRFR4104TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 42A DPAK
More Detail: N-Channel 40V 42A (Tc) 140W (Tc) Surface Mount D-P...
DataSheet: IRFR4104TR datasheetIRFR4104TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFR4104TR is a MOSFET (metal-oxide-semiconductor field-effect transistor) rated at 40V and up to 113A, making it an ideal choice for applications that require high current switching or load-driving, such as automotive or power conversion applications. In this article, we\'ll discuss the application fields and working principle of the IRFR4104TR.

Application fields

The MOSFET is well suited for a wide range of application fields, especially when it comes to switching operations. For example, it is used to control the voltage level at the drain of a power electronic switching device, due to its fast switching times, low power losses and low resistance of the gate-source voltage. Other applications include motor control, LCD backlighting and UPS systems.

The IRFR4104TR is particularly well-suited for automotive application fields, due to its high current capability and fast switching speed. This makes it an ideal choice for complex systems, such as traction control, EV/HEV/PHEV systems, as well as LED light control systems. The MOSFET is also well suited for power conversion and battery charging, due to its low on-state resistance and high peak current capability.

Working Principle

The IRFR4104TR is a depletion-mode n-channel MOSFET. This means that the MOSFET is in an "on" state by default, with no voltage applied to the gate. When a voltage is applied to the gate, the voltage levels at the drain and source terminals of the MOSFET are controlled in one of two ways, depending on the nature of the signal.

When a high voltage is applied to the gate of the MOSFET, the MOSFET is forced into an "off" state, turning off the flow of current from the drain to the source. Conversely, when a low voltage is applied to the gate of the MOSFET, the MOSFET is forced into an "on" state, allowing current to flow from the drain to the source. By controlling the signal applied to the gate, the IRFR4104TR can be used to control the flow of current in a circuit.

Furthermore, the MOSFET is able to control up to 113A of current, due to its low on-resistance and high performance. The channel current is controlled by the voltage applied to the gate, with the higher source-gate voltage resulting in a decrease in channel current. Since the MOSFET is able to handle such a large amount of current, it is an ideal choice for applications that require switching or high current-driving, such as automotive or power conversion applications.

In conclusion, the IRFR4104TR is an ideal choice for a wide range of applications, due to its fast switching times, low on-resistance and high current capabilities.

The specific data is subject to PDF, and the above content is for reference

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