| Allicdata Part #: | IRFR5305TRRPBF-ND |
| Manufacturer Part#: |
IRFR5305TRRPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 55V 31A DPAK |
| More Detail: | P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-P... |
| DataSheet: |  IRFR5305TRRPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 16A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tape & Reel (TR) |
Description
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IRFR5305TRRPBF is a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device manufactured by International Rectifier. It comes in a single package with three terminals. This MOSFET has a type N channel and is designed to have an operating drain-source voltage of 110V and a drain current of 1.2A. It operates at a maximum temperature of 150 °C. The IRFR5305TRRPBF is suitable for use in a number of applications that require either a low or high side MOSFET switch. It can be used as a power switch in consumer electronics, automotive and industrial applications, in addition to being used to drive inductive loads and generate high frequency PWM signals. The IRFR5305TRRPBF application fields include power switching, motor control, load switching, and battery management. It can be used in various power electronic systems such as SMPS, UPS and regulated DC power supplies. IRFR5305TRRPBF Working Principle The IRFR5305TRRPBF operates using the principle of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). This type of transistor consists of a gate, a source, and a drain. The gate is the control element of the MOSFET, which is responsible for controlling the current flowing through the device. The working of the IRFR5305TRRPBF MOSFET is based on the principle of electrostatic control of current. When a voltage (known as the gate voltage) is applied to the gate terminal, it creates an electric field between the gate and the source. This electric field attracts majority carriers (electrons in the case of n-channel MOSFETs) and creates a conducting channel between the source and the drain. The drain current is then controlled by the gate voltage, which conversely can be used to control other devices connected to the MOSFET. The IRFR5305TRRPBF is a voltage controlled device. It can be used to switch AC as well as DC loads. It is commonly used in power switching applications such as motor control, load switching and battery management. The IRFR5305TRRPBF is designed for low and high side switching. It is designed to handle a drain-source voltage of up to 110V and a drain current of 1.2A. It has a gate threshold voltage that is between 2 and 4V, which makes it suitable for use in low voltage applications. The device can operate at a maximum junction temperature of 150 °C, making it suitable for use in industrial applications. The IRFR5305TRRPBF is available in both the standard TO-220 package, as well as the TO-220F package which offers higher power ratings. The IRFR5305TRRPBF is ideal for applications which require robustness and reliability.In conclusion, the IRFR5305TRRPBF is a MOSFET device that comes in a single package with three terminals and is suitable for use in low and high side switching applications. It can be used in motor control, load switching and battery management applications. The device has a drain-source voltage of 110V and a drain current of 1.2A, and a gate threshold voltage between 2 and 4V. It is designed for reliable operation at a maximum temperature of 150 °C.
The specific data is subject to PDF, and the above content is for reference
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