IRFR9110PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8.7nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3.1A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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The International Rectifier IRFR9110PBF is part of their family of advanced silicon-gate MOSFET devices. The IRFR9110PBF has built-in protection against electrostatic discharge and is designed to fit into a variety of high-current applications such as LEEL (Low Electron Loss) or PWM (Pulse Width Modulated) motor control systems. The IRFR9110PBF is a logic level MOSFET with a low RDS(on). It features low on-state resistance as well as fast switching speed making it suitable for use in high-current applications.The IRFR9110PBF is a single-channel enhancement Gate MOSFET. It uses a p-channel depletion Gate transistor for on-state control and the structure is similar to a depletion mode FET. The Gate voltage applied to the IRFR9110PBF is independent of the ON-state resistance and therefore makes the device act as if it were grounded.The IRFR9110PBF has an LED indicator which helps in monitoring its operation. The LED will activate when the device is turned on and will remain on until the device is turned off. The LED can also be used as an indicator of performance.The IRFR9110PBF is an ideal device for designing high-performance digital integrated circuits. It is well suited for applications such as volt and current limits, on/off switches, level shifting and switching power supplies.The IRFR9110PBF operates with a wide range of gate voltages from 10 volts to 20V and its on-state resistance is between 0.3 ohms and 0.6 ohms. The device is rated for currents up to 3A and can be used with up to 10V gates. The IRFR9110PBF is also RoHS compliant and has a maximum operating temperature of 175°C.The IRFR9110PBF is a logic level MOSFET, which means that its gate voltage is independent of the drain-source voltage. This allows for more reliable, efficient and faster switching. It also provides a more stable operating point. Moreover, the IRFR9110PBF has a low threshold voltage, meaning that the device can be switched on with lower gate voltages than other devices.The IRFR9110PBF is a reliable device that can be used in a variety of applications, including motor control systems. It has a low on-state resistance, which reduces power consumption and improves efficiency, and it also has fast switching speeds and is easy to use. Thanks to its protection against electrostatic discharge and its high-performance features, the IRFR9110PBF is a great choice for a wide range of applications.

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