IRFR9110TRL Allicdata Electronics
Allicdata Part #:

IRFR9110TRL-ND

Manufacturer Part#:

IRFR9110TRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 3.1A DPAK
More Detail: P-Channel 100V 3.1A (Tc) 2.5W (Ta), 25W (Tc) Surfa...
DataSheet: IRFR9110TRL datasheetIRFR9110TRL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFR9110TRL is a high-speed, high-density enhancement-mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is a single n-channel, lateral, power MOSFET that has been designed for high-reliability and high-frequency applications.

The IRFR9110TRL has a wide range of applications and is mainly used in applications requiring high frequency, high power, high voltage, and high-temperature operation. Its unique properties make it suitable for power and telecommunication applications, as well as for automotive, audio, and medical systems.

The IRFR9110TRL’s operating principle is based on the presence of both electrons and holes in the channel region. The device’s gate terminal is used to control the conductive region between the drain and source terminals. When the gate voltage is increased, the region becomes more conductive and electrons flow and current passes through the channel. Similarly, when the gate voltage is decreased, the channel resistance increases and the current is reduced.

The IRFR9110TRL’s current-carrying capability is very high and it can operate at frequencies up to 1GHz with a wide range of gate capacitance values. Its low input capacitance and low gate-to-source capacitance makes it ideal for use in high-speed switching applications. The IRFR9110TRL has been designed to meet the requirements of high-temperature applications and is temperature stable up to 175°C. Its avalanche and dynamic dV/dt capability make it ideal for use in high-voltage applications. Its low reverse leakage current and high breakdown voltage makes it suitable for use in high-power applications. Finally, its ESD protection and latch-up immunity properties make it an ideal choice for use in high-reliability applications.

In conclusion, the IRFR9110TRL is a versatile single n-channel MOSFET with wide range of applications, high current-carrying capability and high-frequency operation, low input capacitance and low gate-to-source capacitance, high-temperature operation, avalanche and dynamic dV/dt capability, low reverse leakage current and high breakdown voltage, ESD protection and latch-up immunity. All these features make the IRFR9110TRL an ideal choice for a range of applications including power, telecommunication, automotive, audio and medical systems.

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The specific data is subject to PDF, and the above content is for reference

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