IRFR9110TRR

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The IRFR9110TRR is a single-channel 100-Volt N-Channel MOSFET. It is designed specifically with a user-friendly form factor and comparatively low on-state resistance (RDS(ON)) for various load-switching and speed-control applications. This section provides an overview of the IRFR9110TRR\'s application field and working principle.

Application Field

The IRFR9110TRR is suitable for a variety of applications, including but not limited to, DC-DC converters, motor control, power supplies and alarms.

Its low ON-resistance (RDS(ON)) minimizes conduction losses, making it an optimal choice for power management applications in low voltage, high current systems.

It is able to control large current loads with its low RDS, as well as providing protection from over-voltage, under-voltage and over-temperature faults.

Working Principle

The IRFR9110TRR is an N-type MOSFET that features an N-channel-enclosed structure. It operates on the principle of a voltage-controlled switch.

When a small voltage is applied between its gate and source pins, electrons are attracted to the gate and form an "inversion layer," modulating the voltage between drain and source pins.

This voltage is known as the "threshold voltage," and as long as it is smaller than the applied voltage, the device will stay on. When the voltage applied to the gate exceeds the threshold voltage, the device turns off automatically.

The IRFR9110TRR operates on a maximum drain-source voltage of 100V, a maximum gate-source voltage of ±20V, and a maximum gate-drain voltage of ±20V. Its maximum drain current is 110 mA, and its maximum switching time is 5μs.

Conclusion

The IRFR9110TRR is an optimal power MOSFET choice with its low on-state resistance, high current limits and protective features. With its wide application possibilities, it can be used in a variety of DC-DC converters, motor control, power supplies, alarms and many other applications.

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