IRFR9110TRRPBF

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The IRFR9110TRRPBF is a single N-channel 25V power Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). It is a high voltage, high performance transistor with extremely low power loss and has excellent, fast switching characteristics for use in all switching applications. The IRFR9110TRRPBF is suitable for use in a wide variety of applications such as synchronous rectification, battery chargers, motor speed control, inverter drives, and other high voltage switching applications. This section will discuss the application field and working principles of the IRFR9110TRRPBF.

Application Field

The IRFR9110TRRPBF is a powerful component in the field of power MOSFETs. It is designed to operate at 25V, with a Drain-Source voltage (VDS) up to 25V and a Gate-Source voltage (VGS) up to ±50V. This component is ideal for very high power applications, such as applications which require a high amount of switched power. It is also used in applications where high-speed switching is needed, such as in switch mode power supplies (SMPS) and other designs. Other potential applications of the IRFR9110TRRPBF include power management, digital switching, portable devices, and high voltage power switch.

Working Principle

The IRFR9110TRRPBF is an N-channel MOSFET that is based on the principle of field effect technology. The gate is the control terminal for the device and when no voltage is applied to the gate, the transistor is considered to be off. In order to turn the transistor on, a voltage must be applied to the gate. The voltage applied to the gate controls the amount of current that can flow from the Drain to the Source. When enough current is made to flow through the transistor, it is considered to be in an ‘on’ state and it can act as a switch. When the voltage applied to the gate is removed, the transistor will turn off again and the current will stop flowing.

The IRFR9110TRRPBF also has a Drain-Source voltage rating (VDS) of up to 25V and a gate-source voltage (VGS) of up to ±50V. This transistor is designed to handle current up to a maximum of 6A and a maximum power rating of 150W. With a on resistance (RDS(on)) of 7.2mΩ, the IRFR9110TRRPBF is suitable for high-efficiency applications. The transistor also has a fast switching speed with a maximum response time of 80ns rising and 640ns falling.

In addition to the features mentioned above, the IRFR9110TRRPBF has a number of other features which make it appealing for a wide variety of applications. It has a low capacitance for optimal signal integrity, as well as a high frequency operation for high-speed applications. Furthermore, the IRFR9110TRRPBF is fully RoHS compliant and has an ESD protection of 8KV Human-Body Model (HBM).

Overall, the IRFR9110TRRPBF is an excellent choice for a wide range of applications, especially those which require a high amount of switched power or require high-speed switching. With its wide collection of features and excellent performance, the IRFR9110TRRPBF is an ideal choice for a variety of tasks.

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