Allicdata Part #: | IRFR9214TRL-ND |
Manufacturer Part#: |
IRFR9214TRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 250V 2.7A DPAK |
More Detail: | P-Channel 250V 2.7A (Tc) 50W (Tc) Surface Mount D-... |
DataSheet: | IRFR9214TRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRFR9214TRL represent a specific series of high-power single N-Channel Field Effect Transistor (NFET) from Vishay Intertechnology. irfr9214trl also referred to as a metal oxide semiconductor field-effect transistor (MOSFET) is an active component with a wide range of application.
Understanding the principle behind IRFR9214TRL and the scope of its application will help to deploy the component in an appropriate way.
IRFR9214TRL Application Field
The component is mainly used in industrial and commercial applications. It is particularly effective in controlling and switching of lighting system. Besides, it can be used in implementing several electronic circuits such as DC noise filters, high-speed switching circuits, bridge rectifiers, and power management systems.
The component is specifically suitable for switching applications in the telecommunications and networking sectors. It can be used in harmonics filter circuits and RF, fiber optics, and radio broadcast circuits. In the audio sector, it is best fit for the amplification of musical instruments.
The component is widely applied in the automotive sector where it is useful in enhancing the performance of vehicles, particularly of those equipped with advanced systems such as active air suspension and four-wheel drive.
IRFR9214TRL Working Principle
Like most MOSFETs, the IRFR9214TRL operates according to the principle of electrical field control. Essentially, when appropriately biased, the component\'s voltage will determine the extent of flow of electric current, enabling users to control current flow with minimal energy input.
When voltage is applied to the gate of the component, it creates a channel between the source and drain, allowing electric current to flow. With an increase in voltage, the channel size and subsequently the electric current flow increases. This process, known as the Drain-Source On-State Resistance (RDSon), is important in determining the efficiency of the component.
The principle can also be applied in reverse. By applying negative voltage to the gate, the channel between the source and drain is blocked, and electric current will be cut off, effectively switching off the component.
The IRFR9214TRL features a maximum Drain-Source breakdown voltage (BVDSS) of 100V and a maximum Drain-Source On-State Resistance (RDSon) of 14Ω. It has an absolute maximum rating of 150°C, ±20V gate-source voltage, and a maximum power dissipation of 35W to cover a wide range of application.
A feature of the component that makes it significantly suitable for power control is its capability to handle very large currents, due to its low RDS upon. This makes it ideal for digital power conversion and high capacitive loads applications.
Conclusion
In conclusion, the IRFR9214TRL is a single N-Channel Field Effect Transistor that operates by the principle of electrical field control. It is widely used in industrial and commercial application, particularly in the telecommunications and networking sectors, as well as the automotive industry. Its high Drain-Source breakdown voltage and low RDSon makes it particularly suitable for power control applications.
The specific data is subject to PDF, and the above content is for reference
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