IRFR9310TRL Allicdata Electronics
Allicdata Part #:

IRFR9310TRL-ND

Manufacturer Part#:

IRFR9310TRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 400V 1.8A DPAK
More Detail: P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount D-...
DataSheet: IRFR9310TRL datasheetIRFR9310TRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFR9310TRL is an N-Channel Enhanced Voltage Tolerance Field-Effect Transistor (FET). It is rated for 25V, and is commonly used for applications where high power levels or high voltages need to be handled. This FET is typically used for audio and power amplifiers, low voltage and digital logic circuits, as well as various consumer electronic devices.

This fet was designed specifically to drift low and provide power efficiency, while at the same time offering enhanced voltage tolerance. It also has a fast response time, which is useful in applications where the signal needs to be transmitted quickly.

The IRFR9310TRL is made of Gallium Arsenide Semiconductor material, which is able to operate in temperatures from -55°C to 225°C. It has a maximum breakdown voltage of 25V, a total power dissipation of 1.5W and a maximum gate-source voltage of +5V. Additionally, this FET features low gate-hot capacitance and low gate-threshold voltage.

The working principle of this FET is relatively simple and relies on the transistor’s current carrying ability, which is divided between the “source” and “drain” contacts. An input signal, connected to the gate, will not let any current flow until it reaches a certain threshold voltage, which is set by the manufacturer and indicated on the datasheet. Once the threshold is reached, the source and drain will be able to conduct current proportionally to the voltage applied to the gate.

In the case of the IRFR9310TRL, the gate threshold is relatively low, at just 0.6V. This means that the FET can switch on and off much more quickly than other types of FETs, which makes it a great choice for audio/power amplifiers or digital logic circuits. It is also a popular choice for VOIP apps, audio equipment, and other consumer-centric devices, since it is able to provide enhanced voltage tolerance and fast response times.

The IRFR9310TRL is an ideal choice for applications where high power levels or high voltages need to be handled. It has an enhanced voltage tolerance, a fast response time, low gate-hot capacitance, and low gate-threshold voltage, which make it ideal for a variety of applications. Additionally, its low switching thresholds make it a great choice for digital logic circuits, VOIP apps, audio equipment, and other consumer electronic devices.

The specific data is subject to PDF, and the above content is for reference

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