IRFR9310TRR

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	270pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	7 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.8A (Tc)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRFR9310TRR Application Field and Working PrincipleThe IRFR9310TRR is a single N-channel enhancement mode MOSFET which is optimally designed to be extremely reliable and perform as a power switch, providing a high level of performance and excellence in the field of power devices. This MOSFET is created using Fairchild’s advanced trench technology, which provides lower RDS(ON).This MOSFET helps to reduce the conduction losses in applications such as switching regulators, Solenoid & Motor Control, AC/DC Power Supplies, and Backlight Control. Its advanced epitaxial structure design is capable of supplying up to 10A with a drain source voltage of up to 100V. In addition, IRFR9310TRR has an impressive RDS(ON) which is as low as 60mΩ max in the given range of drain currents.Working PrincipleThe IRFR9310TRR works by controlling the flow of electrons between a source and a drain. This is done by a gate voltage. The voltage creates an electrostatic field that controls the physical location of carriers so current flows in the intended direction. The IRFR9310TRR is an enhancement mode device that contains two types of terminals, a gate and a source. The Gate terminal controls the flow of electric current and hence is known as the control terminal. The Source terminal is the path through which current flows.When a voltage is applied to the gate terminal, the channel that connects the source and the drain is opened, creating a narrow region called the depletion region in between. The size of the depletion region depends on the voltage applied to the gate. The higher the gate voltage, the more current will flow through the device. This is the working principle of an IRFR9310TRR MOSFET.AdvantagesIRFR9310TRR offers many advantages such as:-Low Gate Threshold Voltage: This is especially useful for low voltage applications. This low voltage requirement allows for easier design implementation.-High-Speed Operation: Because of the low gate threshold voltage, the MOSFET can switch rapidly from On to Off states.-Low On-Resistance: This helps to reduce conduction losses. This aids in providing efficient load regulation.-High VDSS: The device can handle drain-source voltages up to 100V.ConclusionThe IRFR9310TRR MOSFET is a reliable and efficient power switch. Its ability to reduce conduction losses and provide high performance makes it an ideal choice for a wide variety of switching applications. Its low gate threshold voltage also makes it suitable for use in low voltage applications, while its high drain-source voltage rating and low on-resistance makes it an attractive solution for efficient and reliable operation.

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