
Allicdata Part #: | IRFR9N20DTRR-ND |
Manufacturer Part#: |
IRFR9N20DTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 9.4A DPAK |
More Detail: | N-Channel 200V 9.4A (Tc) 86W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 86W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRFR9N20DTRR is a unique type of metal oxide semiconductor field effect transistor (MOSFET) that offers high power levels of output, but at a lower cost than many competitive products. The power levels are related to the large drain current, low on resistance, and its high input cap activation. This makes the IRFR9N20DTRR suitable for high voltage and power applications.
The IRFR9N20DTRR is a single N-channel enhancement mode MOSFET. This type of transistor produces its output with an input voltage, either a voltage or a current. It has an integrated gate with its source and drain contacts that are diffused in the surface of the transistor. The gate of the IRFR9N20DTRR is insulated from its drain and source with a thin layer of insulating material, usually made of silicon dioxide.
The IRFR9N20DTRR can be used for various devices, like modulators, processors, amplifiers, filters, power supplies, and power transistors. In addition, it is used in applications that require switching, like power controllers, switches, timers, and power transistors. It can also be used in systems that use logic circuits like the logic chip, logic gates and the like. It is also used in microcontrollers and other digital circuits.
The working principle of the IRFR9N20DTRR is fairly simple. When the gate is connected to an external voltage that is above the threshold voltage, a channel is formed beneath the gate which allows current to pass through the channel. This current is controlled by the gate current, and the Suttura’s relation of the MOSFET is the relationship between the drain current and the gate voltage, which allows the drain current to be controlled. The IRFR9N20DTRR also has a temperature coefficient, which allows it to have its temperature compensated. This ensures that it has the same performance at different temperatures.
The IRFR9N20DTRR can be used in many applications. Some of them are automotive, industrial control, datacom, telecom, audio, and video applications. It is also used in domestic and office applications, like lighting and air conditioning. Its high power levels make it suitable for high voltage and power applications, like power amplifiers and power converters. Power supplies, such as DC-DC converters, AC-DC converters and rectifiers use the IRFR9N20DTRR power levels to provide efficient and clean power. It is also used in switching applications such as switches, relays, and timers. The IRFR9N20DTRR is also used in microcontrollers and other logic circuits.
In conclusion, the IRFR9N20DTRR offers high power levels of output that make it suitable for high voltage and power applications like amplifiers, power converters and power supplies. It also has a temperature coefficient which allows it to have consistent performance at different temperatures. The IRFR9N20DTRR is also used in many applications, such as automotive, industrial control, datacom, telecom, audio and video application, domestic and office applications, and microcontrollers and other logic circuits.
The specific data is subject to PDF, and the above content is for reference
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