IRL520PBF Allicdata Electronics
Allicdata Part #:

IRL520PBF-ND

Manufacturer Part#:

IRL520PBF

Price: $ 0.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 9.2A TO-220AB
More Detail: N-Channel 100V 9.2A (Tc) 60W (Tc) Through Hole TO-...
DataSheet: IRL520PBF datasheetIRL520PBF Datasheet/PDF
Quantity: 2918
1 +: $ 0.92000
10 +: $ 0.89240
100 +: $ 0.87400
1000 +: $ 0.85560
10000 +: $ 0.82800
Stock 2918Can Ship Immediately
$ 0.92
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRL520PBF is a field effect transistor (FET) manufactured by Infineon Technologies. It is a single N-channel, enhancement-mode Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In this tutorial, we will discuss the application field and working principle of this component.

Application Field

The IRL520PBF is mainly used in switch mode power converters, power supply and motor application. This component is suitable for high frequency switching operations and other applications due to its low on-state resistance and fast switching speeds. It is also suitable for low power converters and other applications due to its high input impedance and low gate driving power.

This component is suitable for applications in power electronics systems where improved efficiency and reliability of the switching operation is required. It is also used in motor speed control applications as it has excellent short circuit and over-current protection capabilities.

Working Principle

The working principle of the IRL520PBF is based on the Field Effect Transistor (FET) concept. The FET is a semiconductor device that is capable of controlling large currents without the need for a large voltage input. The FET works by using the electric charge on a metal oxide gate to control the flow of current through the device.

The IRL520PBF operates in the enhancement mode. In this mode, the gate is kept at a negative voltage relative to the source. This negative voltage attracts electrons from the drain and causes the channel to be ”pinched” off or shut. When a positive voltage is applied to the gate, the channel will open and current will flow from the source to the drain.

This component also features low on-state resistance, which allows for reduced switching losses. In addition, the IRL520PBF is designed to withstand high switching frequencies and power handling. This makes it suitable for high frequency switching applications, such as DC-DC conversion or SMPS.

The IRL520PBF provides excellent thermal management capabilities and is designed with a low thermal resistance package. This allows the device to transfer heat efficiently and prevents thermal run-away. This component also has a low gate charge, allowing for a high frequency response.

The IRL520PBF is a reliable, cost-effective solution for applications requiring a high performance FET. With its low on-state resistance and fast switching speeds, the IRL520PBF is the ideal choice for motor speed control and switch mode power converters.

The specific data is subject to PDF, and the above content is for reference

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