IRLR110TRL

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	250pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	6.1nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	540 mOhm @ 2.6A, 5V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	4.3A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The IRLR110TRL is a single N-channel Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a variety of applications in the electronics industry. It is rated for an extremely low on-state resistance, making it an ideal choice for use in amplifiers, power supplies, and other switching applications. In this article, an overview of the IRLR110TRL\'s various application fields, working mechanism, and features will be discussed.

Working Principle

The IRLR110TRL is a type of single N-channel Power MOSFET, which is composed of a channel that is controlled by an electric field. Two/Three terminals connect to the channel with two/three gate inputs to control the current in the channel and a drain gate output. The IRLR110TRL works by applying a voltage to the gate inputs, which generates an electric field that attracts and repels electrons. This electric field creates a current in the channel, which can be used to control the flow of current between the nodes. When the gate voltage is applied, the electrons will travel through the channel and the current will travel through the drain and source terminals. This process is known as the drain-source current drive.

Features

The IRLR110TRL offers various features and advantages that make it attractive for use in amplifiers, power supplies, and other switching applications. The IRLR110TRL has low on-state resistance, making it an ideal choice for use in low-power systems such as those found in computers, microcontrollers, and cell phones. It also offers low gate drive requirements, making it easy to use in applications with limited gate drive capability. The IRLR110TRL has an extremely low threshold voltage, reducing the amount of power necessary for operation. Additionally, it has fast switching speeds, which is beneficial for signal processing applications.

Applications

The IRLR110TRL can be used in a variety of different applications. One of the most popular applications is in amplifier circuits, as its low on-state resistance and low gate-drive requirements make it ideal for this purpose. Additionally, it can be used to create buck-boost converters and power supplies. The IRLR110TRL is also commonly used in signal processing applications, due to its high frequency capabilities. Additionally, its fast switching speeds make it ideal for analog to digital converters and digital signal processing. Finally, the IRLR110TRL can be used for power switching applications, such as those found in motor control and switching applications.

Conclusion

The IRLR110TRL is a single N-channel Power MOSFET with a variety of applications in the electronics industry. Its low on-state resistance, low gate-drive requirements, fast switching speeds, and low threshold voltage make it an ideal choice for low-power systems such as those found in computers, microcontrollers, and cell phones. Additionally, it can be used in amplifiers, power supplies, signal processing applications, and motor control and switching applications.

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