IRLR7821TRRPBF

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IRLR7821TRRPBF is a insulated-gate field-effect transistor (IGFET) called a metal oxide semiconductor field-effect transistor (MOSFET) in its single version. It is designed to be a high-performance, low cost switch designed to handle load currents of up to between 10 and 15 amps. The device is available in an SOIC package with a footprint of 10mm x 5mm. It is a radial leaded (Single) and planar passivated advanced lateral MOSFET specifically designed to handle higher switching and dynamic loads.

The IRLR7821TRRPBF combines low on-state resistance with fast switching time. It is capable of operating with a gate-to-source voltage of 4 volts. It is well suited to applications that require fast switching, such as inverters, switching power supplies, electronic ballasts and motor controls. It also offers fast turn-on and low thermal resistance, making it a suitable choice for applications that need to dissipate large amounts of power.

The IRLR7821TRRPBF has an N-channel Metal Oxide Semiconductor FET (MOSFET) that features an insulated gate, low on-resistance, and fast switching speed. This MOSFET is designed for low power applications that require high-speed switching and high efficiency. The device has a low gate-to-source capacitance of 4 picofarads and a low gate-to-drain capacitance of 8 picofarads. Gate-source-voltage range is 3 to 9 volts, drain-source voltage range is 25 to 125 volts, drain-source current range is up to 140 amps and operating temperature range of -55 to 150 degrees Celsius.

The IRLR7821TRRPBF’s application field mainly consists of low to medium frequency high power switching applications in both automatic and manual control applications. It is suitable for on/off switching and high-speed switching, so it can be used in a wide variety of electronic circuits. It is especially suitable for high current and/or high-speed switching with its low on-resistance and fast switching speed.

The operating principle of the IRLR7821TRRPBF is fairly straightforward. The gate-to-source voltage (VGS) controls the drain current (ID) by acting as a switch that turns the device on and off. When the gate-to-source voltage is higher than the threshold voltage (Vth), the drain-to-source voltage (VDS) is increased. This increases the drain current, which is usually measured by the current-voltage relationship of the device. The gate-to-source voltage also controls the transconductance, which is the ratio of change of drain current to the increment in gate-to-source voltage. Transconductance is typically measured in mhos.

The IRLR7821TRRPBF is a strong choice for low to medium frequency, high power applications. It is capable of handling load currents of up to 10 to 15 amp. It has a low gate-to-source capacitance, low gate-to-drain capacitance and a low gate-to-source voltage. Its easy-to-use features, low thermal resistance and fast switching times, make it an ideal choice for many active switching and dynamic load applications.

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