Allicdata Part #: | IRLR3303PBF-ND |
Manufacturer Part#: |
IRLR3303PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 35A DPAK |
More Detail: | N-Channel 30V 35A (Tc) 68W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR3303PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 68W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRLR3303PBF is a three-terminal, N-channel Power MOSFET manufactured by International Rectifier. It is designed as an enhancement mode device and is able to withstand an avalanche energy of 175mJ. It also features a wide range of operating temperature, very low RDS(on), and low input capacitance.
The IRLR3303PBF is designed to meet the requirements of high power applications and is suitable for use in AC/DC, DC/DC, DC/AC, and other switching applications. It features a low on-state resistance and has a very low input capacitance, making it highly suitable for a wide range of high current switching applications. It is also highly suitable for applications in inverters, converters, and any other applications requiring power accuracy, efficiency, and high switching speeds.
The IRLR3303PBF is composed of an N-channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), and a robust gate driver circuit. The device operates in enhancement mode, meaning the power is switched off when the gate-to-source voltage is less than a threshold voltage and it is switched on when the gate-to-source voltage is more than that threshold. When the gate-to-source voltage reaches the threshold, the MOSFET begins to conduct current, and the voltage drop across the MOSFET remains constant. This constant voltage drop is known as the on-state resistance (RDS(on)), which is the measure of power efficiency.
The gate driver circuit within the IRLR3303PBF ensures that the MOSFET remains operational even in high temperature operation. Despite the large power applications, the device offers a very low thermal resistance (TYP 0.06 C/W) which allows it to remain operational even in extreme temperature conditions. The gate driver circuit also eliminates any unwanted transients during operation and provides protection against overvoltage and short-circuit conditions.
The IRLR3303PBF is readily available in various TO-220 packages and costs relatively low for its range and power rating. The device can be used for applications with a voltage rating of 10V–20V, a current rating of 4.8–15A, and power dissipation of up to 60W, and the device is widely used in AC/DC, DC/DC, and other high power applications.
In conclusion, the IRLR3303PBF is a highly efficient and reliable three-terminal power MOSFET that is suitable for a wide range of switching and power regulating applications. It provides a consistently low RDS(on), a robust gate driver circuit, and low input capacitance. The device is also highly reliable even in varying temperature conditions and is available at a relatively low cost.
The specific data is subject to PDF, and the above content is for reference
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