Allicdata Part #: | IRLR2705PBF-ND |
Manufacturer Part#: |
IRLR2705PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 28A DPAK |
More Detail: | N-Channel 55V 28A (Tc) 68W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR2705PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 880pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 68W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRLR2705PBF is a low-profile, surface-mount, 100-volt, single N-channel Power MOSFET from Infineon Technologies. It is designed for applications requiring high efficiency and excellent switching and thermal performance. It is recommended for use in power supplies and power conversion, DC and AC motor control, and other power applications where space and board layout are limited.
The IRLR2705PBF has a very low on-state resistance (RDSon) for low losses and high efficiency. It uses a package constructed with an enhanced molding process and is designed to maximize the dissipation area and heat transfer. The optimized construction also minimizes the package inductance to reduce ringing and EMI.
The IRLR2705PBF utilizes a traditional MOSFET structure and design. The source, drain and gate terminals are all physically connected to the core circuit, along with the power supply. It uses voltage conduction to control the flow of current through the device. The gate voltage determines how much of the channel current can flow. When the gate voltage is increased, the MOSFET turns “on” and allows current to flow. Conversely, when the gate voltage is decreased, the MOSFET turns “off” and does not allow current to flow. This is known as the principle of “voltage conduction”.
In order to use the IRLR2705PBF optimally, it requires a few electrical components to control its gate. A resistor between the gate and the source is generally used to provide the gate voltage. A capacitor between the gate and the source dampens oscillations and noise. A zener diode is also used to protect the gate voltage from excessive voltages.
IRLR2705PBF is ideal for power supplies, DC/AC motor control, and other power applications where space is limited. It offers very low RDSon for low losses and high efficiency. It has an optimized construction to maximize the surface area and heat transfer, as well as reduce package inductance to minimize ringing and EMI. Additionally, it requires only a few components to control its gate.
The specific data is subject to PDF, and the above content is for reference
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