Allicdata Part #: | IRLR3103-ND |
Manufacturer Part#: |
IRLR3103 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 55A DPAK |
More Detail: | N-Channel 30V 55A (Tc) 107W (Tc) Surface Mount D-P... |
DataSheet: | IRLR3103 Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 107W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IRLR3103, a 60V single N-channel enhancement mode Power MOSFET, is a versatile component with wide-ranging applications in many fields. It is a high-performance insulated gate bipolar transistor (IGBT) that can operate up to 60 volts. The device has good performance and is widely used in various applications, such as switching applications in the automotive, industrial, and communications industries.
The IRLR3103 is a key component in many electronic devices because of its wide voltage range, high switching performance, as well as low on-state and total gate charge. This makes the device suitable for high-power, high-speed switching applications. It works by allowing the flow of current when a certain threshold voltage is applied across the gate-source junction. When the applied voltage exceeds the threshold voltage, current flows from the source to the drain, and the device turns on. When the applied voltage falls below the threshold voltage, the device turns off. The on or off state, referred to as the “operating state”, is determined by the applied voltage, and it is the same regardless of whether the device is in an active or standby state.
The main feature of the IRLR3103 is its high switching speed. The device can switch in under 5 milliseconds, which makes it ideal for high-speed switching applications such as automotive, industrial, and communications. In addition, the device has a good thermal resistance rating and can handle high-temperature applications up to 175° C, making it suitable for harsh industrial and automotive environments.
Other features of the IRLR3103 include low gate charge, low on-state resistance, and high dielectric strength. The low-resistance threshold voltage enables the device to operate at lower voltages than conventional single N-channel enhancement mode power MOSFETs, which results in higher performance and reliability. The low on-state resistance also helps to keep the power losses to a minimum. The dielectric strength of the IRLR3103 ensures that the device operates safely and can withstand high voltages and currents.
The IRLR3103 is used in a variety of applications, such as switching regulators, switching current converters, and switched-mode power supplies. It is used in automotive applications to switch high current loads, such as headlights and motors. It is also used in industrial and communications applications, such as remote sensing and wireless data transmission. The device is suitable for applications requiring fast switching, high power, and high reliability.
In summary, the IRLR3103 is a versatile single N-channel enhancement mode power MOSFET with wide-ranging applications. It provides fast switching, good on-state resistance, low gate charge, and high dielectric strength. This makes the device suitable for a wide range of applications in various industries.
The specific data is subject to PDF, and the above content is for reference
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