Allicdata Part #: | IRLR3303TR-ND |
Manufacturer Part#: |
IRLR3303TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 35A DPAK |
More Detail: | N-Channel 30V 35A (Tc) 68W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR3303TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 68W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
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IRLR3303TR Application Field and Working Principle
The IRLR3303TR is an N-channel enhancement mode power MOSFET transistor. It belongs to a family of MOSFET transistors called the Insulated Gate Bipolar Transistor (IGBT). These transistors are widely used in power switching and regulation applications.The IRLR3303TR is a vertical double diffusion type MOSFET and has a low gate resistance of 1.3 ohms. It has a high transconductance (gm) of 22.6 mS and a low on-state resistance (rDS(on)) of 0.008 ohms at 4.5V. The low gate resistance and high transconductance makes it suitable for high-frequency switching applications. The maximum allowable gate-source voltage (Vgs) of this transistor is ±20V.The IRLR3303TR can handle drain to source voltages (Vds) of up to 175V. This makes it suitable for applications that require high power handling capability such as motor drives, power converters and DC-DC converters. The maximum drain to source current (Ids) that it can handle is 8A.This transistor also has excellent thermal and electrical characteristics. The maximum junction temperature (Tjmax) is 175°C and the thermal resistance (Rth) is 3.8°C/W. It also has a high power dissipation rating of 72W.The working principle of the IRLR3303TR is simple. When a positive voltage is applied to the gate, the transistor conducts current from drain to source, thus allowing power to flow through it. When the gate voltage is removed, the transistor loses its conducting ability and ceases to allow current to flow through it.In summary, the IRLR3303TR is a powerful, high-performance N-channel MOSFET that is suitable for many power switching and regulation applications. Its low gate resistance, high transconductance and low on-state resistance make it a suitable choice for high-frequency switching applications. It also has excellent thermal and electrical characteristics.The specific data is subject to PDF, and the above content is for reference
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