IRLR120ATF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRLR120ATF is a power MOSFET that is widely used in the applications of power management and low-voltage switching operations. It is widely used in various kinds of electronic and power management devices, computers, robotics, and home appliances, where high power and efficiency are needed. In terms of its structure, the IRLR120ATF is a single-N-channel enhancement mode power MOSFET. The MOSFET has a pitch of 0.50 mm and a width of 1.60 mm. It comes in a Thermal Fat-Body Toko package.

The IRLR120ATF is a powerful semiconductor device that is based on the principles of metal-oxide-semiconductor field-effect transistor (MOSFET). The device consists of two parts, a source and a drain, which are usually separated by an oxide layer. The source and drain are then connected to gate via an oxide layer. When a gate voltage is applied, the MOSFET operates in a field-effect mode and conducts an electric current through the gate. The current is then regulated by the gate voltage.

The IRLR120ATF has a breakdown voltage of 120V and a maximum drain-source voltage of 100V. The drain-source on-state resistance is typically 7mΩ. The gate-source voltage ranges from -2V to +8V. The drain current (ID) at the specified drain-source voltage (VDS) is 2.6A. The IRLR120ATF has an integrated fast reverse-recovery body diode, which limits the voltage to a specified level and reduces the switching loss. The device has a maximum operating temperature range of -55°C to 125°C.

The IRLR120ATF is typically used for low-voltage power management and switching applications. It is especially suitable for high-speed switching operations of AC/DC converters, voltage regulators, main converters, home appliances, robotics, battery management, and servers. In addition, due to its excellent performance, the device is also used in switch-mode power converters, SMPS, and IGBT protection circuits.

The IRLR120ATF works by utilizing the principle of field-effect transistor (FET). When a gate voltage is applied to the device, an electric current flows through the gate, and this current controls the current flowing through the source and drain. The gate voltage can be adjusted to change the output current of the MOSFET. This makes the IRLR120ATF perfect for controlling current flow in various power management and switching operations. The device can also be used to protect delicate electronics and prevent them from over-current.

In summary, the IRLR120ATF is a single-N-channel enhancement mode power MOSFET with a breakdown voltage of 120V and a maximum drain-source voltage of 100V. It has an integrated fast reverse-recovery body diode, which limits the voltage to a specified level and reduces the switching loss. It is typically used for low-voltage power management and switching applications, such as AC/DC converters, voltage regulators, main converters, home appliances, robotics, battery management, and servers. The IRLR120ATF works by utilizing the principle of field-effect transistor (FET) and can be used to control the current flow in various power management and switching operations.

The specific data is subject to PDF, and the above content is for reference