Allicdata Part #: | IRLR2705TRRPBF-ND |
Manufacturer Part#: |
IRLR2705TRRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 28A DPAK |
More Detail: | N-Channel 55V 28A (Tc) 68W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR2705TRRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 880pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 68W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRLR2705TRRPBF is a high performance n-channel enhancement mode power MOSFET with a drain source voltage of 55V and a maximum pulsed drain current of 90A. It is a single die transistor with a low gate charge, making it ideal for high speed switching applications. The device is fabricated using a DMOS process which offers low gate charge and low RDS(on) in order to minimize the conduction losses and increase the efficiency of the switching.
The IRLR2705TRRPBF is widely used in industrial, automotive and consumer applications such as power converters, motor control systems and load switches. It is also used in high speed switching applications such as telecommunication systems and switching/inverting systems. The device is widely used in applications that require high voltage and current operation with low power losses.
The IRLR2705TRRPBF can be used in a multivibrator circuit, a circuit that allows for a digital signal to be converted into an analog signal. In this type of circuit the MOSFET acts as a switch, allowing for a current to flow when a certain voltage is applied to the gate. The current will continue to flow until the voltage is removed from the gate. This is done by alternating a low and high voltage at the gate.
The IRLR2705TRRPBF has an operating frequency up to 30MHz, with a switching frequency of up to 15kHz. It has a low on-state resistance of 3.5mOhms and a low gate charge of 21.1nC. The device has a high maximum drain-source voltage of 55V. The IRLR2705TRRPBF can be used in switching applications with a drain-source current up to 90A and a pulsed current of 180A.
The IRLR2705TRRPBF has a very low threshold voltage at only 1.7V. This allows for the device to be triggered at lower voltages, improving the efficiency of the switch. The IRLR2705TRRPBF also has a low power consumption of only 0.2W and has a typical gate-source capacitance of only 4.5pF.
Overall the IRLR2705TRRPBF is an excellent choice for high voltage, high-current applications and can be used in a wide range of applications from power converters to motor control systems and load switches. With its low gate and low power consumption, this device is ideal for energy efficiency in electrical systems.
The specific data is subject to PDF, and the above content is for reference
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