IRLR3714Z Allicdata Electronics
Allicdata Part #:

IRLR3714Z-ND

Manufacturer Part#:

IRLR3714Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 37A DPAK
More Detail: N-Channel 20V 37A (Tc) 35W (Tc) Surface Mount D-Pa...
DataSheet: IRLR3714Z datasheetIRLR3714Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRLR3714Z is a type of N-channel Power MOSFET transistor with large number of applications in power electronics field. It is mainly used in the design of power converters and other switching systems. IRLR3714Z is also used in the power control of high current and medium voltage switching circuits, high power amplifiers, and other high current switching circuits. The IRLR3714Z is designed for applications requiring high efficiency, low power dissipation, and high switching speed.

The IRLR3714Z has a wide application field and is used in a various range of products, including power supplies, UPS, SPS, and inverters. It can also be used to control power converters and other types of power electronics systems. It is widely used for low energy and high current applications. It is also used for high current and high frequency applications, such as motor controllers, circuit protection devices, and DC to DC converters.

IRLR3714Z has a P-type FET structure which is typically implemented on a highly doped semiconductor. It has a maximum drain-source voltage of 40V, and a drain current of 170A. It also has a low on-resistance of 0.012Ohm and an on-state RDS(on) up to 30mΩ. Moreover, the IRLR3714Z has a powerful Gate driving capability, an Avalanche energy rating of 8.2mJ and an ESD protection of up to 4KV. The IRLR3714Z is available in a variety of package styles, making it suitable for various applications.

The IRLR3714Z operates as an N-channel switching device, with the gate controlling the drain current (or the output current). When the gate voltage is low, the transistor can be effectively used as an open-drain device in high current applications. When the gate voltage is high, the drain current will be controlled by the Gate-Source voltage, and a current-limiting protection circuit is generally used in this case. The IRLR3714Z can also be used as a current source, depending on its application.

IRLR3714Z is a suitable device for medium voltage and high current applications, and it offers excellent switching performance. Its on-resistance, temperature variation and fast switching speed makes it ideal for power control circuits, and its low energy rating makes it suitable for energy-efficient designs. The IRLR3714Z is also used in many consumer and industrial products, such as automotive, consumer, and industrial power supplies, motor controllers, UPS, and DC to DC converters. It is also used in applications that require high current and high frequency switching, such as switching power amplifiers.

In short, the IRLR3714Z is a versatile N-channel Power MOSFET transistor capable of providing low on-resistance and high current capability in medium voltage and high current applications. Its wide application field, low switching losses and fast switching speeds make it a suitable device for both consumer and industrial power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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