Allicdata Part #: | IRLR3714ZPBF-ND |
Manufacturer Part#: |
IRLR3714ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 37A DPAK |
More Detail: | N-Channel 20V 37A (Tc) 35W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR3714ZPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.1nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRLR3714ZPBF from Infineon Technologies is a junction field effect power transistor (JFET). It is a single N-channel device, meaning that one pin acts as the input, which controls the size of the JFET’s gate current. It is widely used in power switching applications and requires very little drive current.
The IRLR3714ZPBF was designed to provide a low on-resistance, high frequency operation and low gate charge. It features a very low threshold voltage and a low gate capacitance, making it ideal for high speed switching applications. Its maximum drain current is 1.8 A and its drain-source breakdown voltage is 20 V. Its operating temperature range is -55°C to 175°C.
In power switching applications, the JFETs are used as switches due to their low input capacitance and extremely low gate charge. They are relatively easy to use and provide a safe, reliable and cost-effective switching solution. The main advantage of using this type of device is that it requires minimal gate current to switch the device. This makes them very efficient in regulating current through the device, improving system performance and saving energy.
IRLR3714ZPBF’s gate current is controlled through its pulse-width modulation (PWM) capacity. PWM allows for adjustment of the device’s switching speed and duration, thus allowing for more control or modulation of system performance. The use of PWM also reduces power losses, resulting in lower system operating temperature, improved reliability and increased efficiency.
The IRLR3714ZPBF can also be used for power management and signal conditioning applications. It is a popular choice for precision signal conditioning circuits due to its high gate charge, low gate threshold and low on-resistance. It can be used to amplify signals, regulate voltage and current levels or switch power devices.
The IRLR3714ZPBF has several features that make it a good candidate when used in high power switching applications. It features a low on-resistance of 33 mΩ and a maximum drain current of 1.8 A, which makes it ideal for high power applications. It also has a very low gate charge of 8.8 nC and a maximum drain-source breakdown voltage of 20 V, making it suitable for handling high voltages.
The IRLR3714ZPBF provides high switching speed, low gate charge and low input capacitance, making it well suited for high speed switching applications. It can also be used for power management and signal conditioning circuits, making it an ideal choice for any application where high power switching and signal conditioning are required.
The specific data is subject to PDF, and the above content is for reference
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