Allicdata Part #: | IRLR3715TRR-ND |
Manufacturer Part#: |
IRLR3715TRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 54A DPAK |
More Detail: | N-Channel 20V 54A (Tc) 3.8W (Ta), 71W (Tc) Surface... |
DataSheet: | IRLR3715TRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRLR3715TRR is a full enhancement-mode, n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed to handle larger current and lower resistance level than other low-voltage transistors. It can also be used to switch power, as it is able to operate down to 1 volt, yet still provide up to 25A peak current. The IRLR3715TRR offers significant power and area savings over low-voltage bipolar transistors and is suitable for use in any low voltage application.
The IRLR3715TRR is an ideal device for power management applications, such as battery charging. The device integrates well with other power control ICs and is able to reliably control the charge for safe and efficient operation. In particular, the IRLR3715TRR is suitable for use in portable applications where a low voltage supply, or a biased input, is required.
The IRLR3715TRR has a low on-resistance level, which helps reduce the overall power consumption of the system. It also features a low gate charge, allowing it to be quickly turned on and off. The device is designed to operate over a wide temperature range and can withstand high surge currents.
The IRLR3715TRR has a single-gate MOSFET structure, with an n-channel source and drain region in the substrate. The gate is connected to the source and can be used to control the current flow between the two. The device has a field-effect mode of operation, which allows the gate to be relatively unaffected by the drain voltage, allowing it to operate even at low voltages.
The IRLR3715TRR is commonly used for applications such as motor control, DC/DC converters, and load switches. It is also suitable for use in power management and chip-on-board applications. The device has a standard packing structure, with a TO-220 package and five leads. This allows for a space-saving solution on a crowded board.
The IRLR3715TRR has been designed with enhanced ruggedness, allowing it to withstand large surges while still operating within the specified range. This ensures a long lifespan of the device and provides reliable performance. The device also has low gate capacitance, allowing for a fast switching speed with minimal power losses.
To summarize, the IRLR3715TRR is a full enhancement-mode, n-channel metal-oxide-semiconductor field-effect transistor designed to provide improved performance and energy efficiency in low voltage applications. It is suitable for use in motor control and DC/DC converters, as well as other power management and chip-on-board applications.
The specific data is subject to PDF, and the above content is for reference
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