Allicdata Part #: | IRLR3717TRPBF-ND |
Manufacturer Part#: |
IRLR3717TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 120A DPAK |
More Detail: | N-Channel 20V 120A (Tc) 89W (Tc) Surface Mount D-P... |
DataSheet: | IRLR3717TRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2830pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 89W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IRLR3717TRPBF is a high-performance Power MOSFET manufactured by International Rectifier, a company which dedicates itself to the research and development of advanced semiconductor devices. It is designed specifically for the use in high power switching applications under various frequencies, voltages and temperatures.
The IRLR3717TRPBF is a N-Channel Advanced Trench Mosfet, which has been designed to provide a greater level of performance than the conventional P-Channel-based solutions. IRLR3717TRPBF devices are capable of serving a wide variety of applications ranging from motor control in electric vehicles, to low-ripple DC-DC converters, to high-voltage gate drives.
The most remarkable feature of the IRLR3717TRPBF is its advanced high-voltage MOSFET technology. This technology offers superior performance over its P-channel counterparts, delivering higher current and superior on-state resistance due to the higher available gate voltage. The gate voltage on IRLR3717TRPBF is up to 193 volts for the higher-voltage models, thus allowing for much higher power output than other MOSFETs.
IRLR3717TRPBF provides a high power handling capability, making it an ideal solution for high power applications. It has an on-resistance of 27 milli-ohms when measured under a gate voltage of 10 volts, with a maximum current rating of 17 Amps. IRLR3717TRPBF also features a pre-biased diode design which helps reduce the potential forward voltage of the MOSFET. This feature enables safe and reliable operation in high-voltage applications.
The IRLR3717TRPBF is also suitable for high switching frequencies, allowing for higher frequency operation than traditional MOSFETs. This feature enables the IRLR3717TRPBF to be used in applications such as motor control, data converters, and other power-sensitive applications.
In addition to its high voltage, current and switching frequency capabilities, the IRLR3717TRPBF also provides a low-noise operation and high body diode efficiency. The device has a maximum noise level of 40dB below 100 kHz, and its high body diode efficiency helps reduce losses and increases overall efficiency.
Overall, the IRLR3717TRPBF is a very popular choice among engineers, thanks to its superior high voltage performance, current handling capabilities, and high frequency operation. The IRLR3717TRPBF is an ideal solution for high power switching applications, motor control, and other applications requiring high performance.
The specific data is subject to PDF, and the above content is for reference
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