Allicdata Part #: | IRLR3717TRRPBF-ND |
Manufacturer Part#: |
IRLR3717TRRPBF |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 120A DPAK |
More Detail: | N-Channel 20V 120A (Tc) 89W (Tc) Surface Mount D-P... |
DataSheet: | IRLR3717TRRPBF Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.36742 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2830pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 89W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRLR3717TRRPBF has become a popular choice of MOSFET due to its high level of reliability, low power consumption and low noise levels. It is constructed with a Tri-Gate Vth than the planar and is more highly efficient. The IRLR3717TRRPBF is a surface-mounted device, made to optimize and maximize system performance while reducing overall power consumption.
The IRLR3717TRRPBF is a field-effect transistor (FET) that is commonly used for switching or amplifying circuits that use digital signals. These devices are ideal for applications requiring low signal and high-current capability. Specifically, this MOSFET is self-protected against thermal overload and has very low on-resistance. It offers a wide dynamic range, which allows for greater flexibility when used in a variety of applications.
The IRLR3717TRRPBF has several key features that make it a desirable component in many designs. This MOSFET is both cost-effective and reliable. It has an exceptionally low on-resistance at given gate voltage levels and it also provides exceptional output current levels. Additionally, it has a very high speed switching action, which helps reduce switching noise and increase system efficiency.
The working principle of the IRLR3717TRRPBF is based on the concept of a field-effect transistor (FET) that is currently in use. A gate voltage is applied at one terminal, while the second terminal has a predetermined voltage assigned to it. As a result, the current flowing through the device is determined by the voltage applied to the gate. When the gate voltage is raised and the predetermined voltage is maintained, the FET will become an \'on\' state, enabling current to flow through the device. Inversely, when the gate voltage is lowered, the FET will become an \'off\' state, disallowing current to flow.
The IRLR3717TRRPBF is a great choice for a wide range of applications, including power management, automation, robotics, and medical applications. Due to its high level of efficiency, reliable operation, and low power consumption, this MOSFET can be used in highly sensitive and repetitive circuits. It is especially useful in robotic and medical applications where speed, accuracy and reliability are paramount considerations. Additionally, due to its low noise and exceptional thermal protection, it is highly safe to use in any scenario that requires high levels of current.
The IRLR3717TRRPBF is a versatile and reliable MOSFET that offers high levels of performance and efficiency in a layman\'s package. Its wide dynamic range, low power consumption, high speed switching capabilities, and exceptional thermal protection make it ideal for applications demanding low signal and high current capability. Therefore, it can be used for a range of applications, including power management, automation, robotics, and medical applications.
The specific data is subject to PDF, and the above content is for reference
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