| Allicdata Part #: | IRLU8203PBF-ND |
| Manufacturer Part#: |
IRLU8203PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 110A I-PAK |
| More Detail: | N-Channel 30V 110A (Tc) 140W (Tc) Through Hole I-P... |
| DataSheet: |  IRLU8203PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | HEXFET® |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2430pF @ 15V |
| FET Feature: | -- |
| Power Dissipation (Max): | 140W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I-PAK |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRLU8203PBF is a type of single, P-channel power MOSFET. It is used primarily in power management, portable electronics, and factory automation applications. This power MOSFET provides a cost-effective, low-voltage switching solution for a wide range of applications, including battery-powered designs. This device is suited for medium- and high-current switching applications.
The operation of the IRLU8203PBF is relatively simple. The MOSFET is an insulated-gatefield-effect transistor that consists of three parts: the source (S), the gate (G), and the drain (D). The source and drain regions are heavily doped, while the gate is strongly insulated from the other two regions. Applying a voltage to the gate arranges the electrostatically-induced electric field that controls the current that flows from the source to the drain. This voltage can be applied manually, or with an integrated controller, such as a microcontroller.
The IRLU8203PBF is a P-channel power MOSFET that has a source-drain voltage rating of -20V and a maximum drain current of -8A. The device has an RDS-on of 40 mΩ and an RDS-on/RDS-off ratio of 10:1. The device also has a fast switching speed and an extremely low on-state resistance. These characteristics make it an ideal choice for low-voltage and high-current switching applications.
IMRU8203PBF can be used in a variety of applications, including portable electronics, power management, and factory automation. For example, it can be used in DC-DC converter circuits for step-up or step-down voltage regulation, or for controlling loads in automotive and industrial applications. In addition, this device can be used in power-on reset circuits and to protect against overloads.
Overall, the IRLU8203PBF is a high-performance, cost-effective single P-channel MOSFET that is well suited for a wide range of applications. Its low on-state resistance and fast switching speed make it an ideal choice for power management and portable electronics designs. This device also provides protection for overloads and power-on reset circuits.
The specific data is subject to PDF, and the above content is for reference
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